Zobrazeno 1 - 10
of 433
pro vyhledávání: '"Muralt Paul"'
Publikováno v:
Phys. Rev. Applied 16, 014014 (2021)
We present fabrication of 570-um-thick, millimeter-sized soda-lime-silicate float glass blocks with a 1-um-thick AlN-thin-film piezoelectric transducer sandwiched between thin metallic electrodes and deposited on the top surface. The electro-mechanic
Externí odkaz:
http://arxiv.org/abs/2011.08125
Autor:
Kabir, Ahsanul, Santucci, Simone, Van Nong, Ngo, Varenik, Maxim, Lubomirsky, Igor, Nigon, Robin, Muralt, Paul, Esposito, Vincenzo
Publikováno v:
Acta Materialia Volume 174, 1 August 2019, Pages 53-60
Some oxygen defective metal oxides, such as cerium and bismuth oxides, have recently shown exceptional electrostrictive properties that are even superior to the best performing lead-based electrostrictors, e.g. lead-magnesium-niobates (PMN). Compared
Externí odkaz:
http://arxiv.org/abs/1907.01906
Autor:
Howell, Kaitlin M., Bashir, Waqas, de Pastina, Annalisa, Matloub, Ramin, Muralt, Paul, Villanueva, Luis G.
Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship between crystallographic texture and piezoelectric response, x-ray diffraction ha
Externí odkaz:
http://arxiv.org/abs/1811.09156
Autor:
Mertin, Stefan, Heinz, Bernd, Rattunde, Oliver, Christmann, Gabriel, Dubois, Marc-Alexandre, Nicolay, Sylvain, Muralt, Paul
Publikováno v:
In Surface & Coatings Technology 15 June 2018 343:2-6
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
In Acta Materialia 1 October 2016 118:1-7
Autor:
Fengler, Franz P. G., Nigon, Robin, Muralt, Paul, Grimley, Everett D., Sang, Xiahan, Sessi, Violetta, Hentschel, Rico, LeBeau, James M., Mikolajick, Thomas, Schroeder, Uwe
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstab
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80496
https://tud.qucosa.de/api/qucosa%3A80496/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80496/attachment/ATT-0/
Autor:
Jiang, Bo, Santis-Alvarez, Alejandro J., Muralt, Paul, Poulikakos, Dimos, Borhani, Navid, Thome, John R., Maeder, Thomas
Publikováno v:
In Chemical Engineering Journal 1 September 2015 275:206-219
Publikováno v:
In Journal of Power Sources 1 January 2015 273:1202-1217
Autor:
Scherrer, Barbara, Evans, Anna, Santis-Alvarez, Alejandro J., Jiang, Bo, Martynczuk, Julia, Galinski, Henning, Nabavi, Majid, Prestat, Michel, Tölke, René, Bieberle-Hütter, Anja, Poulikakos, Dimos, Muralt, Paul, Niedermann, Philippe, Dommann, Alex, Maeder, Thomas, Heeb, Peter, Straessle, Valentin, Muller, Claude, Gauckler, Ludwig J.
Publikováno v:
In Journal of Power Sources 15 July 2014 258:434-440