Zobrazeno 1 - 10
of 141
pro vyhledávání: '"Muralidharan Rangarajan"'
Autor:
Shuvro, Shonkho, Jayaramaiah, Roopa, Muralidharan, Rangarajan, Nath, Digbijoy N., Sen, Prosenjit
We demonstrate active embedded microfluidic cooling in $\beta$-Ga$_2$O$_3$. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick $\beta$-Ga$_2$O$_3$ substrate. The micro-channels are ab
Externí odkaz:
http://arxiv.org/abs/2304.02645
Publikováno v:
In Optical Materials November 2023 145
Autor:
Baby, Rijo, Mandal, Manish, Roy, Shamibrota K., Bardhan, Abheek, Muralidharan, Rangarajan, Basu, Kaushik, Raghavan, Srinivasan, Nath, Digbijoy N.
Publikováno v:
In Microelectronic Engineering 15 October 2023 282
Autor:
Kumar, Sandeep, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices with meanderi
Externí odkaz:
http://arxiv.org/abs/1905.01922
Autor:
Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputter deposited on InAlN/GaN HEMT and was investigated for different post
Externí odkaz:
http://arxiv.org/abs/1806.03291
In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF) and power applications and compare them with III-nitride devices. It i
Externí odkaz:
http://arxiv.org/abs/1802.02313
Autor:
Pratiyush, Anamika Singh, Krishnamoorthy, Sriram, Kumar, Sandeep, Xia, Zhanbo, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N.
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plane sapphire
Externí odkaz:
http://arxiv.org/abs/1802.01574
Autor:
Kumar, Sandeep, Pratiyush, Anamika Singh, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the c
Externí odkaz:
http://arxiv.org/abs/1709.03692
Autor:
Pratiyush, Anamika Singh, Krishnamoorthy, Sriram, Solanke, Swanand Vishnu, Xia, Zhanbo, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N.
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates.
Externí odkaz:
http://arxiv.org/abs/1702.04470
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