Zobrazeno 1 - 10
of 829
pro vyhledávání: '"Murali, V"'
Autor:
Ravindiran, Gokulan a, b, ⁎, Janardhan, Gorti c, Rajamanickam, Sivarethinamohan d, Sivarethinamohan, Sujatha e, Murali, V. f, Hayder, Gasim b, g, ⁎⁎
Publikováno v:
In Groundwater for Sustainable Development May 2024 25
Autor:
Muniasamy, Senthil Kumar a, ⁎, Gopala Krishna, GVT. b, Murali, V. c, Ravindiran, Gokulan d, ⁎
Publikováno v:
In Desalination and Water Treatment April 2024 318
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Bulletin of the Chemical Society of Ethiopia. 2023, Vol. 37 Issue 5, p1299-1306. 8p.
Autor:
Nkonkobe, S., Murali, V.
The introduction of bars in-between blocks of an ordered set partition(preferential arrangement) results in a barred ordered set partition(barred preferential arrange- ment). Having the restriction that some blocks of barred preferential arrangements
Externí odkaz:
http://arxiv.org/abs/1509.07352
Autor:
Nkonkobe, S., Murali, V.
A preferential arrangement of a finite set is an ordered partition. Associated with each such ordered partition is a chain of subsets or blocks endowed with a linear order. The chain may be split into sections by the introduction of a vertical bar, l
Externí odkaz:
http://arxiv.org/abs/1503.06173
Autor:
Nkonkobe, S., Murali, V.
A preferential arrangement of a set $X_n=\{1,2,...,n\}$ is an ordered partition of the set $X_n$ induced with a linear order. Separation of blocks of a preferential arrangement with bars result in the notation of barred preferential arrangements. Rog
Externí odkaz:
http://arxiv.org/abs/1503.06172
Autor:
Jena, Rajender, Garg, Dushyant K, Achary, Mohan Murali V, Singh, Jasdeep, Tomar, Rachana, Choudhury, Lipsa, Bansal, Ruby, Kundu, Bishwajit *
Publikováno v:
In Journal of Biotechnology 20 February 2020 310:68-79
Autor:
Murali, V.
Publikováno v:
Proceedings of the Indian History Congress, 2019 Dec 01. 80, 772-786.
Externí odkaz:
https://www.jstor.org/stable/27192932
This article develops a consistent theory of free carrier screening of a two-dimensional electron gas in the silicon inversion layer in the presence of stacked layers of dielectric environment-commonly knows as gate stack in context of field-effect t
Externí odkaz:
http://arxiv.org/abs/1301.2040