Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Munsik Kim"'
Publikováno v:
Pharmaceutics, Vol 11, Iss 7, p 326 (2019)
The stratum corneum is the outermost skin layer that obstructs the delivery of active ingredients found in cosmeceutical products. Chemical peels and microbeads have been used to overcome this layer, but these methods can cause side effects and are n
Externí odkaz:
https://doaj.org/article/dac3332d2812472aa62d9b866a191328
Autor:
Jeesu Kim, DaeYong Lee, Yeu-Chun Kim, Sangyong Jon, MunSik Kim, Ilkoo Noh, Juhwan Kim, Chulhong Kim, Donghyeon Oh
Publikováno v:
Journal of Controlled Release. 320:283-292
Image-guided therapy, combined with imaging and therapeutic action, forms an attractive system because it can induce outstanding effects at focused locations. However, the conventional liposomes-based system cannot figure in therapeutic or imaging ro
Autor:
MunSik Kim, Wonsik Jung, Sangyong Jon, Ilkoo Noh, Youngju Son, Hocheol Shin, Do-hyeon Kim, Yeu-Chun Kim
Publikováno v:
Biomaterials. 275
Despite the potential of photothermal therapy (PTT) for cancer treatments, PTT alone has limitations in treating metastatic tumors and preventing tumor recurrence, highlighting the need to combine PTT with immunotherapy. This study reports tumor micr
Publikováno v:
Pharmaceutics, Vol 11, Iss 7, p 326 (2019)
Pharmaceutics
Volume 11
Issue 7
Pharmaceutics
Volume 11
Issue 7
The stratum corneum is the outermost skin layer that obstructs the delivery of active ingredients found in cosmeceutical products. Chemical peels and microbeads have been used to overcome this layer, but these methods can cause side effects and are n
Publikováno v:
SPIE Proceedings.
As the mask specifications become tighter for low k1 lithography, more aggressive repair accuracy is required below sub 20nm tech. node. To meet tight defect specifications, many maskshops select effective repair tools according to defect types. Norm
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
As the pattern size became gradually smaller, the defect detectability of the photomask inspection tool was more improved. For these reasons, we have to repair various defects more precisely. By improving the mask yield through the repair process, we
Publikováno v:
SPIE Proceedings.
As the number of masks per wafer product set is increasing and low k1 lithography requires tight mask specifications, the patterning process below sub 20nm tech. node for critical layers will be much more expensive compared with previous tech. genera
Autor:
Munsik Kim, Se-Geun Park, Young-Seok Kim, Jong Ung Lee, El-Hang Lee, Seung Gol Lee, Sung Hyun Oh, Yong Kyoo Choi, Beom-Hoan O
Publikováno v:
Microelectronic Engineering. 86:486-488
In this paper, the effectiveness of grating mask proposed previously was evaluated for line and space patterns, and its fabrication tolerance was analyzed with aerial image simulation. The structure of grating mask was determined from the local featu
Autor:
Aditya Dayal, Munsik Kim, John Miller, Jae-Cheon Shin, Kangjoon Seo, Changyeol Kim, Trent Hutchinson, KiHun Park, Sangchul Kim
Publikováno v:
SPIE Proceedings.
The Critical Dimension Uniformity (CDU) specification on photo-mask is getting increasingly tighter which each successive node. The ITRS roadmap for optical masks indicates that, the CDU (3 sigma) for dense lines for binary or attenuated phase shift
Autor:
Munsik Kim, Byoung-Ho Nam, Donggyu Yim, Yoonsuk Hyun, Changreol Kim, Byoung-Sub Nam, Yongdae Kim, Cheol-Kyun Kim, Yongkyoo Choi, Suk-Kyun Kim, James Moon, Chang-Moon Lim
Publikováno v:
Alternative Lithographic Technologies.
One of the major issues introduced by development of Extreme Ultra Violet Lithography (EUV) is high level of flare and shadowing introduced by the system. Effect of the high level flare degrades the aerial images and may introduce unbalanced Critical