Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Munir D. Naeem"'
Autor:
K. P. Muller, Munir D. Naeem, Peter D. Hoh, Hung Y. Ng, Michael D. Armacost, M. Gutsche, S. Srinivasan, B. Spuler, W. Yan, Richard Wise, George A. Kaplita, J. H. Keller, Scott Halle, A. Gutmann, Jeffrey J. Brown
Publikováno v:
IBM Journal of Research and Development. 43:39-72
An overview is presented of plasma-etching processes used in the fabrication of ULSI (ultralarge-scale integrated) semiconductor circuits, with emphasis on work in our facilities. Such circuits contain structures having minimum pattern widths of 0.25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abcf65bfb6a1b09d6890a9762cf622f
https://doi.org/10.1147/rd.431.0039
https://doi.org/10.1147/rd.431.0039
Publikováno v:
Thin Solid Films. :485-492
Diffusion barriers are used mainly to prevent ionic contamination and diffusion of interconnect metals into the Si substrate in complementary metal oxide semiconductor devices (CMOS). However, diffusion barriers are equally important in order to prev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb50247a505856afd0f1813db8b810b
https://doi.org/10.1016/s0040-6090(96)08973-0
https://doi.org/10.1016/s0040-6090(96)08973-0
Publikováno v:
Journal of Electronic Materials. 21:1087-1091
The kinetics of grain growth in thin copper films during magnetically enhanced (ME) plasma processing is monitored. Transmission electron microscopy (TEM) results suggest microstructural evolution characteristic of abnormal grain growth in these film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87cf0fb09fedf0211d117f2ca9840e20
https://doi.org/10.1007/bf02667598
https://doi.org/10.1007/bf02667598
Autor:
Zhibin Ren, Josephine B. Chang, Munir D. Naeem, Judson R. Holt, Omer H. Dokumaci, Qingyun Yang, Kevin K. Chan, Arvind Kumar, John King, Xinlin Wang, John Yates, Cindy Wang, Jin Cho, Thomas S. Kanarsky, C. Ouyang, Andreas Bryant, Yongsik Moon, Ying Zhang, Andreas Gehring, Dae-Gyu Park, Marwan H. Khater, Michael A. Guillorn, Chung-Hsun Lin, Wilfried Haensch, Amlan Majumdar, Xi Li
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
The intrinsic FinFET device structure can provide an estimated 10–20% reduction in delay relative to planar FETs at the 22nm technology node due to superior electrostatics. However, FinFETs are more prone to parasitic resistance and capacitance due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d19c2b2f90f4ab0e9e73331d3d4c0c1b
https://doi.org/10.1109/vtsa.2009.5159323
https://doi.org/10.1109/vtsa.2009.5159323
Autor:
L. Economikos, Andres Bryant, D. Degraw, Munir D. Naeem, Chun-Yung Sung, Woo-Hyeong Lee, L. Black, Christopher D. Sheraw, Meikei Ieong, Yujun Li, Siddhartha Panda, Shih-Fen Huang, Massimo V. Fischetti, Judson R. Holt, Victor Chan, Thomas S. Kanarsky, Dureseti Chidambarrao, Renee T. Mo, Gregory Costrini, David M. Fried, J. Groschopf, Mukesh Khare, Xinhui Wang, Scott Luning, A. Bonnoit, D. Brown, A. Kapur, Min Yang, Paul D. Agnello, X. Chen
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
Hybrid orientation technology (HOT) has been successfully integrated with a dual stress liner (DSL) process to demonstrate outstanding PFET device characteristics in epitaxially grown [110] bulk silicon. Stress induced by the nitride MOL liners resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d36571eb8715f9f2852016a60f5d349d
https://doi.org/10.1109/.2005.1469192
https://doi.org/10.1109/.2005.1469192
Autor:
Antoinette F. Molless, Ronald W. Nunes, Donald C. Wheeler, Alvin G. Thomas, Santo Credendino, Munir D. Naeem, Timothy R. Farrell, Alfred K. K. Wong, Peter D. Hoh, Zhijian G. Lu, Richard A. Ferguson, Donald J. Samuels, Will Conley
Publikováno v:
SPIE Proceedings.
The traditional lithographic approach employed by the semiconductor industry has been to pursue use of advanced prototype optical exposure tools and resists. The benefits of doing so have been: (1) The lithographic process that is used in development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53ba59ec20280c2645773357ff9cba7
https://doi.org/10.1117/12.275974
https://doi.org/10.1117/12.275974
Publikováno v:
MRS Proceedings. 343
We have studied the effects of low energy ion bombardment on thin copper films. Evaporated, sputtered and CVD copper films (∼50 nm) were exposed to Magnetically Enhanced (ME) Ar plasmas. The microstructural changes (grain size) in the films were st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5269a0a41c8e35783ee83b6186d9eb0c
https://doi.org/10.1557/proc-343-113
https://doi.org/10.1557/proc-343-113
Publikováno v:
Journal of The Electrochemical Society. 148:G137
The deep ultraviolet (DUV) photoresist systems are essential for photolithography to produce subquarter micrometer patterns in semiconductor fabrications. Such photoresist systems are not very stable when subjected to low energy ion bombardment durin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::196d382a7191d3ed38058b1a0535c45a
https://doi.org/10.1149/1.1346621
https://doi.org/10.1149/1.1346621
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:209
The effects of low‐energy plasma bombardment have been quantified for the first time. The plasma effects on thin copper films (∼50 nm) have been studied by exposing these films to magnetically enhanced Ar plasmas. The Cu films deposited by differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79729f7b9528ba24ca359e78aa33f9b
https://doi.org/10.1116/1.587999
https://doi.org/10.1116/1.587999
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