Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Munhyeon Kim"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 95-100 (2023)
In this paper, floating fin structured vertically stacked nanosheet gate-all-around (GAA) metal oxide semiconductor field-effect transistor (FNS) is proposed for low power logic device applications. To verify the electrical performance of the propose
Externí odkaz:
https://doaj.org/article/ff78f69c60d84f17a0807c2f3e742c11
Publikováno v:
IEEE Electron Device Letters. 44:1007-1010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6761d05c1bbfc4dca330d62e7754a7b6
https://doi.org/10.1109/led.2023.3265065
https://doi.org/10.1109/led.2023.3265065
Autor:
Seunghwan Song, Munhyeon Kim, Bosung Jeon, Donghyun Ryu, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Jae-Joon Kim, Wonbo Shim, Daewoong Kwon, Byung-Gook Park
Publikováno v:
IEEE Electron Device Letters. 43:1657-1660
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e718d3657db7bb6752bfbfdca22dbee5
https://doi.org/10.1109/led.2022.3197239
https://doi.org/10.1109/led.2022.3197239
Publikováno v:
IEEE Transactions on Electron Devices. 69:2088-2093
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9698de77f87149eb34127cc20524923
https://doi.org/10.1109/ted.2022.3154683
https://doi.org/10.1109/ted.2022.3154683
Publikováno v:
IEEE Transactions on Electron Devices. 69:1048-1053
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a7008a7e61c057592d2e4678d02b941
https://doi.org/10.1109/ted.2022.3144965
https://doi.org/10.1109/ted.2022.3144965
Publikováno v:
IEEE Transactions on Nanotechnology. 21:534-538
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96cc5a259209b1bd2c14f09077e44a7c
https://doi.org/10.1109/tnano.2022.3207505
https://doi.org/10.1109/tnano.2022.3207505
Publikováno v:
IEEE Electron Device Letters. 42:1607-1610
In this letter, we propose a double-gated ferroelectric-gate field-effect-transistor (DG-FeFET) for processing-in-memory (PIM) operations in a single device for the first time. The proposed device is highly compatible with a conventional fin field-ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6364527db0f84650dd8460df44d0ac4d
https://doi.org/10.1109/led.2021.3116797
https://doi.org/10.1109/led.2021.3116797
Autor:
Munhyeon Kim, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Changha Kim, Dong-Oh Kim, Byung-Gook Park, Daewoong Kwon
Publikováno v:
2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8358c9ba89ad7326e72f51cf57f7ebb8
https://doi.org/10.1109/itc-cscc55581.2022.9895087
https://doi.org/10.1109/itc-cscc55581.2022.9895087
Autor:
Sihyun Kim, So Youn Kim, Ryoongbin Lee, Donghyun Ryu, Junil Lee, Kitae Lee, Sangwan Kim, Jong-Ho Lee, Munhyeon Kim, Byung-Gook Park
Publikováno v:
IEEE Transactions on Electron Devices. 67:2648-2652
In this brief, several issues attributed to the channel-release process in vertically stacked-gate-all-around MOSFETs (GAAFETs) having various nanosheet (NS) widths were rigorously investigated. Because of the finite selectivity of SiGe (sacrificial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96dac683d86a314d5fc0b30ae130e2b2
https://doi.org/10.1109/ted.2020.2989416
https://doi.org/10.1109/ted.2020.2989416
Publikováno v:
IEEE Transactions on Electron Devices. 67:1859-1863
In this article, structure optimization of high- ${k}$ interfacial layer (IL), deposited between the gate and the gate sidewall spacer, was performed in a 5-nm node nanosheet field-effect transistor (NSFET). High- ${k}$ IL can be formed during the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e55de31449b1b22e0501fbf2fd8e3446
https://doi.org/10.1109/ted.2020.2975255
https://doi.org/10.1109/ted.2020.2975255