Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Mun-Kyu Choi"'
Publikováno v:
Current Applied Physics. 4:1-7
In order to fabricate nonvolatile 4 Mb ferroelectric random access memory (FRAM) for the application to portable electronic devices, we proposed two noble techniques; (1) shared sense amplifier arrangement structure for reducing a chip size, active c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::135f588d8aa0bbe0686aaf78285f4eb5
https://doi.org/10.1016/j.cap.2003.09.005
https://doi.org/10.1016/j.cap.2003.09.005
Autor:
Kinam Kim, Yoon-Jong Song, Hyun-Ho Kim, N. W. Jang, Mun-Kyu Choi, Byung-Gil Jeon, Dong-Jin Jung, Byung-Jun Min, Sung-Yung Lee, H. J. Joo
Publikováno v:
IEEE Journal of Solid-State Circuits. 37:1472-1478
Nonvolatile 32-Mb ferroelectric random access memory (FRAM) with-a 0.25-/spl mu/m design rule was developed by using an address transition detector (ATD) control scheme for the application to SRAM and applying a common plate folded bit-line cell sche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93021d334c6435affbeb4491c84669ef
https://doi.org/10.1109/jssc.2002.802357
https://doi.org/10.1109/jssc.2002.802357
Autor:
Yoon-Jong Song, Kinam Kim, Kang-Deog Suh, Seung-Kyu Oh, Mun-Kyu Choi, Byung-Gil Jeon, Yeon-Bae Chung
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1690-1694
The charge distribution of memory cells is an important issue in high-density ferroelectric RAM (FRAM). Using memory cells as the reference cells provides an optimum reference voltage level, which automatically tracks the main memory cell properties.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::668cf15a84ed36f34ebb45aed357e3fc
https://doi.org/10.1109/4.881216
https://doi.org/10.1109/4.881216
Autor:
Mun Kyu Choi
Publikováno v:
The Korean Journal of Advertising and Public Relations. 18:165
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e611dd5fbdf1b804f01f614b9c2d92
https://doi.org/10.16914/kjapr.2016.18.1.165
https://doi.org/10.16914/kjapr.2016.18.1.165
Autor:
null Mun-Kyu Choi, null Byung-Gil Jeon, null Nakwon Jang, null Byung-Jun Min, null Yoon-Jong Song, null Sung-Yung Lee, null Hyun-Ho Kim, null Dong-Jin Jung, null Heung-Jin Joo, null Kinam Kim
Publikováno v:
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9365faa04b94529b2cbef85af4ce1655
https://doi.org/10.1109/isscc.2002.992175
https://doi.org/10.1109/isscc.2002.992175
Autor:
null Mun-Kyu Choi, null Byung-Gil Jeon, null Nakwon Jang, null Byung-Jun Min, null Yoon-Jong Song, null Sung-Yung Lee, null Hyun-Ho Kim, null Dong-Jin Jung, null Heung-Jin Joo, null Kinam Kim
Publikováno v:
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198746b5504bf2df6c62358aac86fcba
https://doi.org/10.1109/isscc.2002.992986
https://doi.org/10.1109/isscc.2002.992986
Autor:
Mun-Kyu Choi, Hunmo Kim
Publikováno v:
SICE '99. Proceedings of the 38th SICE Annual Conference. International Session Papers (IEEE Cat. No.99TH8456).
We present the process analysis system that can analyze causes, like an expert, after processes. Also, the plasma etching process that affects yield is controlled using an artificial neural network to predict output before the process. In modeling, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dca30a39c023871948017bb0b6647f5
https://doi.org/10.1109/sice.1999.788727
https://doi.org/10.1109/sice.1999.788727
Publikováno v:
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).
Summary form only given. Recently there has been a growing interest in ferroelectric RAM because of its great potential as a future nonvolatile memory. This work presents, for the first time, a 4 Mbit FRAM with novel design techniques: 1) open bitlin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949a6686059a91ce92f9fc388fcc7e88
https://doi.org/10.1109/vlsic.1999.797249
https://doi.org/10.1109/vlsic.1999.797249
Publikováno v:
2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).
A 4 Mb 1T1C FeRAM with a common-plate folded bit-line architecture achieves low noise without cell area penalty in nonvolatile ferroelectric RAM. The decoder of common plate scheme reduces area to about 62% that of a conventional separate-plate schem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e73cf1c53e2d2f45b9040d7a9a15fdd
https://doi.org/10.1109/isscc.2001.912423
https://doi.org/10.1109/isscc.2001.912423
Autor:
null Byung-Gil Jeon, null Mun-Kyu Choi, null Yoonjong Song, null Seung-Kyu Oh, null Yeonbae Chung, null Kang-Deog Suh, null Kinam Kim
Publikováno v:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4359d297887b2bf6830d02161cec119
https://doi.org/10.1109/isscc.2000.839781
https://doi.org/10.1109/isscc.2000.839781