Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Mun-Jun Kim"'
Autor:
Yong-Han Roh, Seung-Heon Lee, Kyungseok Oh, Jung-Chan Lee, Jun-Hee Lee, Mun-jun Kim, Seok-Woo Nam, Seung-jae Lee, Mansug Kang
Publikováno v:
ECS Transactions. 33:53-58
We studied the misalignment between active and gate layer in terms of silicon dislocation caused by high temperature anneal process in SOG based STI gap-fill process. The SOG process is one of good candidates to overcome gap-fill limitation due to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09496e4e4e7ec2d55702a7ecf72e433
https://doi.org/10.1149/1.3567403
https://doi.org/10.1149/1.3567403
Publikováno v:
Journal of Non-Crystalline Solids. 347:279-284
Nd 3+ photoluminescence from Nd doped, hydrogenated amorphous silicon alloyed with carbon (a-Si:H:C) is investigated. Nd-doped, a-Si:H:C films were deposited using electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH 4 and CH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137961385de596df7a3bf3b78c84f8dc
https://doi.org/10.1016/j.jnoncrysol.2004.09.016
https://doi.org/10.1016/j.jnoncrysol.2004.09.016
Publikováno v:
Japanese Journal of Applied Physics. 43:444-448
The effect of C co-doping on the Er3+ luminescence properties of Er-doped hydrogenated amorphous Si (a-Si:H) is investigated. Er-doped a-Si:H thin films co-doped with C were deposited using electron–cyclotron resonance plasma enhanced chemical vapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f34e276899927682272a38e6dfda68c
https://doi.org/10.1143/jjap.43.444
https://doi.org/10.1143/jjap.43.444
Publikováno v:
Journal of Non-Crystalline Solids. 332:53-59
The de-excitation mechanisms of Er 3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH 4 and concurrent sputtering of Er is investigated. As the temperature is raised
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d538cec82cd934eef422e963ff88286
https://doi.org/10.1016/j.jnoncrysol.2003.09.010
https://doi.org/10.1016/j.jnoncrysol.2003.09.010
Publikováno v:
Journal of Non-Crystalline Solids. 315:312-320
The effect of erbium-doping on the structural and optical properties of hydrogenated amorphous silicon (a-Si:H) is investigated. Optical absorption and Raman spectra indicate that erbium doping introduces defect states, and that above a concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cad7e136755b638aaf439f8279bcf16
https://doi.org/10.1016/s0022-3093(02)01624-1
https://doi.org/10.1016/s0022-3093(02)01624-1
Autor:
Mun-Jun Kim, Jung H. Shin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3230-3234
Erbium-doped hydrogenated amorphous silicon (a-Si:H) thin films were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 with concurrent sputtering of erbium. The oxygen and carbon contamination levels in all f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1231d9ffb773ff3764ffb33f232ac3
https://doi.org/10.1116/1.582047
https://doi.org/10.1116/1.582047
Autor:
Seon Beom Kim, Mun Jun Kim, Qing Liu, Bang Yeon Hwang, Jong Hoon Ahn, Yang Hee Jo, Mi Kyeong Lee
Publikováno v:
Natural Product Sciences. 22:270
Green tea, the leaves of Camellia sinsneis (Theaceae), is generally acknowledged as the most consumed beverage with multiple pharmacological functions including antioxidant activity. This study was performed to analyze the effect of extraction condit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6965da43c02b77a5c3512284a7774811
https://doi.org/10.20307/nps.2016.22.4.270
https://doi.org/10.20307/nps.2016.22.4.270
Publikováno v:
Applied Physics Letters. 83:2778-2780
The Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2 mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe5b482f797970b5d0e10c5e438d843
https://doi.org/10.1063/1.1615837
https://doi.org/10.1063/1.1615837
Autor:
Deok-Young Jung, Joo-Tae Moon, Mun-jun Kim, Jun-Won Lee, Kyung-Mun Byun, Seok-Woo Nam, Eunkee Hong, Hyongsoo Kim, Chilhee Chung, Seung-Heon Lee, Jung-Hoo Lee, Hyo-sug Lee, Mansug Gang
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
A highly robust gap-fill process technology of spin-on glass (SOG) was developed for the interlayer dielectric (ILD) in sub-30nm devices. We revealed that the filling behavior of SOG within gaps during spin-coating is mainly dependent on the capillar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aab5e725b672c32d9534949a0790feb
https://doi.org/10.1109/iitc.2010.5510709
https://doi.org/10.1109/iitc.2010.5510709
Publikováno v:
Applied Physics Letters. 72:1092-1094
The composition dependence of room temperature 1.54 μm Er3+ photoluminescence of erbium-doped silicon:oxygen thin films produced by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed33bb7c308ae03cfa14fe6069ea0ae
https://doi.org/10.1063/1.120974
https://doi.org/10.1063/1.120974