Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mun Yin Chee"'
Autor:
Jain, Muskan, Patel, Mayur Jagdishbhai, Lingli Liu, Gosai, Jeny, Khemnani, Manish, Gogoi, Himangshu Jyoti, Mun Yin Chee, Guerrero, Antonio, Wen Siang Lew, Solanki, Ankur
Publikováno v:
Nanoscale Horizons; Mar2024, Vol. 9 Issue 3, p438-448, 11p
Autor:
Pan-Ke Zhou, Xiao-Li Lin, Mun Yin Chee, Wen Siang Lew, Tao Zeng, Hao-Hong Li, Xiong Chen, Zhi-Rong Chen, Hui-Dong Zheng
Publikováno v:
Materials Horizons.
A new type of zinc-organic-based ternary memories have been implemented by regulating the conjugated degree of organic ligands and triggering the ring-to-chain relaxation of S62−, which paves a new way for the construction of multilevel memories.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1991ff7dcbc5b1c645c88ae76d08c276
https://doi.org/10.1039/d3mh00037k
https://doi.org/10.1039/d3mh00037k
Publikováno v:
ACS applied materialsinterfaces. 14(31)
Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f57160b4ae4739a6c27cf8f1a31f6e0c
https://pubmed.ncbi.nlm.nih.gov/35892238
https://pubmed.ncbi.nlm.nih.gov/35892238
Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6945ad922276717f036d91f68f1db00
https://hdl.handle.net/10356/162672
https://hdl.handle.net/10356/162672
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6aa34845712af4e51e99da3425e8bd
https://doi.org/10.1109/snw50361.2020.9131623
https://doi.org/10.1109/snw50361.2020.9131623
Autor:
Yong Chiang Ee, Kunqi Hou, Jia Rui Thong, Desmond Loy Jia Jun, Jia Min Ang, Somsubhra Chakrabarti, Mun Yin Chee, Putu Andhita Dananjaya, Wen Siang Lew
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this paper, study on the thermal annealing effect is done on nanoscale W/TaO x /Pt resistive random access memory (RRAM) structure. Electrical characterization shows that device performance is improved after undergoing thermal annealing, with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf1a2d48a874299cb98f6594fd79dcd
https://doi.org/10.1109/snw50361.2020.9131617
https://doi.org/10.1109/snw50361.2020.9131617
Autor:
Samuel Chow Chen Wai, Wen Siang Lew, Somsubhra Chakrabarti, Jia Min Ang, Jia Rui Thong, Kunqi Hou, Mun Yin Chee, Desmond Loy Jia Jun, Putu Andhita Dananjaya, Yong Chiang Ee
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this paper, conductance switching behavior of Pt/HfOx/Ti redox-based memristive devices has been thoroughly investigated. The conduction mechanisms involved during the device operation can be associated with the trap-controlled SCL conduction mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48736edd474d81b0353d8c1f0b3f7dae
https://doi.org/10.1109/snw50361.2020.9131609
https://doi.org/10.1109/snw50361.2020.9131609