Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mumtaz Hussien"'
Autor:
Mumtaz Hussien, abeer bader
Publikováno v:
مجلة التربية والعلم, Vol 31, Iss 1, Pp 137-146 (2022)
ABSTRACT In this paper an improved phonon imaging for GaP has been calculated, this crystal is one of III-V group. In the presence of piezoelectric properties, the computation treatment is based on increasing the number of points in the reduced Brill
Externí odkaz:
https://doaj.org/article/ae1bf2d8872249db8708774f7c5e1cb9
Autor:
Ismail Yahya, Mumtaz Hussien
Publikováno v:
مجلة التربية والعلم, Vol 30, Iss 4, Pp 1-14 (2021)
Abstract In this paper, the semi-empirical tight binding method for the nearest neighbors in the first Brillouin zone has been used to calculate the energy band structure of GaAs crystal which have zinc blend ZB structure, the band structure has been
Externí odkaz:
https://doaj.org/article/bca8833609924f74b397923df728ad2d
Autor:
Ismail Yahya, Mumtaz Hussien
Publikováno v:
مجلة التربية والعلم, Vol 30, Iss 4, Pp 201-219 (2021)
Abstract In this paper, the band structure of gallium group of III-V semiconductor has been calculated with temperature, the semi-empirical tight binding method was used to calculate the band structure and the matrix elements were calculated for both
Externí odkaz:
https://doaj.org/article/28aae896eca14c0c93e6d4742a6dc348
Autor:
Hussein Sultan, Mumtaz Hussien
Publikováno v:
مجلة التربية والعلم, Vol 30, Iss 2, Pp 165-174 (2021)
Abstract In this research tight-binding method has been applied to calculate the band structure in ZnSe crystal, the matrix elements of have been calculated using the method used by Vogl and Cohen. A computer program has been designed in MATLAB langu
Externí odkaz:
https://doaj.org/article/4bd328b2941e41a08e71b4b57ab00d46
Autor:
Rozana Noori, Mumtaz Hussien
Publikováno v:
مجلة التربية والعلم, Vol 30, Iss 1, Pp 46-57 (2021)
Abstract The drift-diffusion model is considered as one of the most important models which is used to describe the characteristics of semiconductor devices and can be applied to wide range of applications started from micro up to nano scale devices a
Externí odkaz:
https://doaj.org/article/367a6310a0f9470787081662e8a1e647
Autor:
Mumtaz Hussien, Mahmood Mahmood
Publikováno v:
مجلة التربية والعلم, Vol 29, Iss 4, Pp 108-123 (2020)
Abstract The Boltzmann transport equation is the basic equation for solving the transport of charge carrier (electrons, holes) problems in semiconductor devices. The distribution function has been obtained from the solution of this equation. The dist
Externí odkaz:
https://doaj.org/article/cee18a8396a642d081180527edb73218