Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Muliana Tahan"'
Autor:
Muliana Tahan, Siti Nooraya Mohd Tawil, Khadijah Ismail, Anis Suhaili Bakri, Nur Amaliyana Raship, Nafarizal Nayan
Publikováno v:
Solid State Phenomena. 317:471-476
The effect of various target to substrate distance on the physical properties of sputtered Gd-doped ZnO thin films were investigated. The thin films with three distances between a target to substrate ranged from 12.0, 13.5 and 15.0 cm were deposited
Autor:
Riyaz Ahmad Mohamed Ali, Nur Amaliyana Raship, Ahmad Shuhaimi Abu Bakar, Muliana Tahan, Zulkifli Azman, Nafarizal Nayan, Anis Suhaili Bakri
Publikováno v:
2020 IEEE Student Conference on Research and Development (SCOReD).
The GaN is considered by many as it has demonstrated the capability to be the displacement technology for silicon semiconductor in power electronic devices and light emitting diodes. In this project, heterostructure of GaN/AlN were deposited using RF
Autor:
Mohd Yazid Ahmad, Mohamad Hafiz Mamat, Zamri Bin Yusop, Nafarizal Nayan, Muliana Tahan, Zulkifli Azman, Norain Sahari, Ahmad Shuhaimi Abu Bakar
Publikováno v:
2020 IEEE Student Conference on Research and Development (SCOReD).
The deposition of A1N thin film was conducted in three different working pressures of 3, 5 and 10 mTorr by HiPIMS method with tilted sputter target. XRD pattern shows nearly single crystalline of a-axis A1N thin films were produced. A1N thin film gro
Autor:
Nur Amaliyana Raship, Siti Nooraya Mohd Tawil, Khadijah Ismail, Nafarizal Nayan, Muliana Tahan, Anis Suhaili Bakri
Publikováno v:
2020 IEEE International Conference on Semiconductor Electronics (ICSE).
Gd-doped ZnO thin films have been deposited using the simultaneous process of RF and DC sputtering on top of glass substrates at room temperature. 50W to 125 W of RF power has been adjusted to the Gd target. The structural and optical properties were
Autor:
Nafarizal Nayan, Soon Chin Fhong, Muliana Tahan, Riyaz Ahmad Mohamed Ali, Ali Kanakhir Aldabahi, Nur Amaliyana Raship, Mohd Khairul Ahmad, Mohd Zainizan Sahdan, Anis Suhaili Bakri, Wan Haliza Abd Majid, Ahmad Shuhaimi Abu Bakar, Mohd Yazid Ahmad
Publikováno v:
2020 IEEE International Conference on Semiconductor Electronics (ICSE).
Fabrication of amorphous GaN thin film was performed using RF magnetron sputtering without any external temperature on silicon substrate. Thickness of deposited GaN film was approximately 200 nm. This work presents the surface morphology and roughnes
Autor:
Mohd Yazid Ahmad, Taman Kajang Perdana, Kajang, Selangor, Malaysia, Wan Haliza Abdul Majid, Mohd Zainizan Sahdan, Ahmad Shuhaimi Abu Bakar, Soon Chin Fhong, Mohd Khairul Ahmad, Jln Kajang Perdana Nanorian Technologies Sdn Bhd, Muliana Tahan, Nafarizal Nayan, Nur Amaliyana Raship, Anis Suhaili Bakri
Publikováno v:
International Journal of Integrated Engineering. 12
Autor:
Nur Amaliyana Raship, S.G. Abdu, Ahmad Hadi Ali, Aliyu Kabiru Isiyaku, Muliana Tahan, Nafarizal Nayan, Anis Suhaili Bakri
Publikováno v:
Thin Solid Films. 738:138959
The distinguished transparent conductive indium tin oxide (ITO) based multilayer films with thin copper-aluminium (Cu-Al) metals interlayer (ITO/Cu-Al/ITO) were prepared on p-type silicon (Si) by radio frequency and direct current magnetron sputterin
Autor:
Nur Amaliyana Raship, Aliyu Kabiru Isiyaku, Nafarizal Nayan, S.G. Abdu, Anis Suhaili Bakri, Muliana Tahan, Ahmad Hadi Ali
Publikováno v:
Materials Science in Semiconductor Processing. 131:105870
High-performance transparent conductive Sn doped In2O3/Al–Cu/Sn doped In2O3 (ITO/Al–Cu/ITO) multilayer films were prepared by radio frequency magnetron sputtering of ITO and direct current magnetron sputtering of aluminium Al and copper Cu on n-t
Autor:
Nur Amaliyana Raship, Anis Suhaili Bakri, Muliana Tahan, Siti Nooraya Mohd Tawil, Khadijah Ismail, Nafarizal Nayan
Publikováno v:
2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
The effect of deposition time on physical properties of gadolinium (Gd) doped zinc oxide (ZnO) thin films were successfully investigated. The films were deposited using simultaneous direct current (DC) and radio frequency (RF) sputtering on a glass s
Autor:
Amaliyana Raship, Anis Suhaili Bakri, Muliana Tahan, Mohd Yazid Ahmad, Soon Chin Fhong, Khairul Anuar Mohamad, Nafarizal Nayan, Mohd Zainizan Sahdan
Publikováno v:
2019 IEEE International Conference on Sensors and Nanotechnology.
The paper presents a high crystalline aluminum nitride (AIN) thin films with c-axis orientation under the optimized sputtering conditions of 200 W RF power, 5 mTorr working pressure and substrate temperature in room temperature. The study examines th