Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Mukta Behera"'
Publikováno v:
AIP Advances, Vol 9, Iss 9, Pp 095065-095065-6 (2019)
This work reports the formation of topological Bi2Se3 phase upon annealing higher % of Bi content in amorphous As40Se60-xBix (x = 2, 7, 10 and 15%) chalcogenide thin films prepared by thermal evaporation process. The phase identification was done by
Externí odkaz:
https://doaj.org/article/570bcbb9e4a24d869676c537c96e6cef
Publikováno v:
Advanced Materials Proceedings. 1:200-204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c8c95611928b53f12a6979e78b9854
https://doi.org/10.5185/amp.2016/216
https://doi.org/10.5185/amp.2016/216
Publikováno v:
Phase Transitions. 93:148-157
The laser irradiation with band gap light of thermally evaporated As40Se55Bi5 and As40Se45Bi15 thin films was found to be accompanied by structural changes which in turn changed the optical constan...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::419a55c4e1e4536a9d007772d751fcea
https://doi.org/10.1080/01411594.2019.1687895
https://doi.org/10.1080/01411594.2019.1687895
Publikováno v:
Indian Journal of Physics. 94:469-475
The structural, microstructural and electronic band gap properties of bilayer Bi/As2Se3 thin films prepared on glass substrate have been discussed in detail. The thin films prepared by thermal evaporation technique under high vacuum were characterize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8a5097074accd6f976d0a14ded25bb
https://doi.org/10.1007/s12648-019-01484-w
https://doi.org/10.1007/s12648-019-01484-w
Publikováno v:
Physica B: Condensed Matter. 560:51-59
In the present study, Bi/As2Se3 bilayer thin films (100 nm Bi as top layer and 800 nm As2Se3 as bottom layer) were prepared by thermal evaporation technique and were annealed at 165 °C for ½ h, 1 h and 2 h. The structural, micro-structural and opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37c5a7202ec11c75e67e62c8d00b15a
https://doi.org/10.1016/j.physb.2019.02.034
https://doi.org/10.1016/j.physb.2019.02.034
Publikováno v:
Optical Materials. 66:616-622
Amorphous As50Se50 and As50Se40Te10 thin films were prepared on glass substrates by using thermal evaporation method. The transmission spectra T (λ) of the films at normal incidence were measured in the wavelength range 400–1100 nm. A straightforw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e50c84a10b3b3211d401d6ed16dfb5a
https://doi.org/10.1016/j.optmat.2017.03.015
https://doi.org/10.1016/j.optmat.2017.03.015
Publikováno v:
Indian Journal of Physics. 91:555-562
In the present report, we have demonstrated the combine effect of deposition and photo diffusion of Te into As50Se50 chalcogenide thin films. The influence of Te deposition onto As50Se50 layer has modified the optical parameters. The thermally evapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48504926303189c732b1ad0d9c5ca7fb
https://doi.org/10.1007/s12648-016-0954-2
https://doi.org/10.1007/s12648-016-0954-2
Publikováno v:
RSC Advances. 7:18428-18437
Amorphous chalcogenide semiconducting materials are very sensitive to electromagnetic radiation and are useful for infrared optics and play a pivotal role in modern technology. In the present article, As2Se3 and bilayer Bi/As2Se3 thin films were prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06aff64db120277d625753ca7d1d0f12
https://doi.org/10.1039/c7ra00922d
https://doi.org/10.1039/c7ra00922d
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
In the present work, we probe into the phase transition of amorphous Bi10As40Se50 to a crystalline one upon thermal annealing. The Bi10As40Se50 thin films were prepared through thermal evaporation method and were annealed at 130° for 5h. The as-prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de6129f29408c74d9d6639d3a9afb88
https://doi.org/10.1063/1.5112841
https://doi.org/10.1063/1.5112841
Publikováno v:
Journal of Non-Crystalline Solids. 544:120191
Ion beams of widely varying energies from keV to GeV have played a significant role in the modification of materials. The manuscript reports the influence of 120 MeV Ag swift heavy ion irradiation (SHI) at two different fluence on As40Se58Bi02 and As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca9b3db67f92706ff08685adb3309b5
https://doi.org/10.1016/j.jnoncrysol.2020.120191
https://doi.org/10.1016/j.jnoncrysol.2020.120191