Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Mukherjee, Samik"'
Autor:
Yang, Jun, Li, Jianzhu, Bahrami, Amin, Nasiri, Noushin, Lehmann, Sebastian, Cichocka, Magdalena Ola, Mukherjee, Samik, Nielsch, Kornelius
In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the
Externí odkaz:
http://arxiv.org/abs/2210.17144
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadeni
Externí odkaz:
http://arxiv.org/abs/2203.14419
Autor:
Singh, Sudarshan, Mukherjee, Subhrajit, Mukherjee, Samik, Assali, Simone, Luo, Lu, Das, Samaresh, Moutanabbir, Oussama, Ray, Samit K
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour deposition-grown high S
Externí odkaz:
http://arxiv.org/abs/2202.06751
Autor:
Assali, Simone, Attiaoui, Anis, Del Vecchio, Patrick, Mukherjee, Samik, Nicolas, Jérôme, Moutanabbir, Oussama
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence band chara
Externí odkaz:
http://arxiv.org/abs/2112.15185
This work unravels the atomic details of the interaction of solute atoms with nanoscale crystalline defects. The complexity of this phenomenon is elucidated through detailed atom probe tomographic investigations on epitaxially-strained, compositional
Externí odkaz:
http://arxiv.org/abs/2107.00800
Autor:
Mukherjee, Samik, Wajs, Marcin, de la Mata, Maria, Givan, Uri, Senz, Stephan, Arbiol, Jordi, Francoeur, Sebastien, Moutanabbir, Oussama
Publikováno v:
Phys. Rev. B 104, 075429 (2021)
Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a characteristic, size-dependent temperature. Above
Externí odkaz:
http://arxiv.org/abs/2007.04306
Publikováno v:
Crystal Growth & Design 2020
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semiconductors (Si)GeSn. In addition to its importance for emerging photonic an
Externí odkaz:
http://arxiv.org/abs/2003.01308
Autor:
Persichetti, Luca, Montanari, Michele, Ciano, Chiara, Di Gaspare, Luciana, Ortolani, Michele, Baldassarre, Leonetta, Zoellner, Marvin H., Mukherjee, Samik, Moutanabbir, Oussama, Capellini, Giovanni, Virgilio, Michele, De Seta, Monica
Publikováno v:
Crystals 2020, 10(3), 179
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spec
Externí odkaz:
http://arxiv.org/abs/2002.05074
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Akademický článek
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