Zobrazeno 1 - 6 of 6 pro vyhledávání: '"Mukesh Kumar Bind"'
1
Theoretical Investigation of Dual-Material Stacked Gate Oxide-Source Dielectric Pocket TFET Based on Interface Trap Charges and Temperature Variations
Autor: Kaushal Kumar Nigam, null Dharmender, Vinay Anand Tikkiwal, Mukesh Kumar Bind
Publikováno v: Journal of Circuits, Systems and Computers.
In this paper, the performance of dual-material stacked gate oxide-source dielectric pocket-tunnel field-effect transistor (DMSGO-SDP-TFET) has been investigated by considering fixed interface trap charges (ITCs) at the Si–SiO2 interface. During th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::34c3c3dc5c9f429d1156cb90ec57e417
https://doi.org/10.1142/s0218126623502523
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3
Sensitivity Assessment of Electrically Doped Cavity on Source Junctionless Tunnel Field-Effect Transistor-Based Biosensor
Autor: Mukesh Kumar Bind, Kaushal Nigam, Sajai Vir Singh
Publikováno v: Journal of Circuits, Systems and Computers. 32
The tunnel field-effect transistor (TFET) has emerged as a promising device for biosensing applications due to band-to-band tunneling (BTBT) operation mechanism and a steep subthreshold swing. In this paper, an electrically doped cavity on source jun
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ffeb4377ca0766d8cf871c47c99f230
https://doi.org/10.1142/s0218126623500184
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5
Sensitivity Analysis of Junction Free Electrostatically Doped Tunnel-FET Based Biosensor
Autor: Kaushal Nigam, Mukesh Kumar Bind
The electrostatic doping technique has the ability to reduce random dopant fluctuations (RDFs), fabrication complexity and high thermal budget requirement in the fabrication process of nano-scale devices. In this paper, first time propose and simulat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ba4d6ace5e2c8102546853cf752e632
https://doi.org/10.21203/rs.3.rs-754761/v1
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