Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mujie Lan"'
Autor:
Dezhuang Yang, Dongfa Ding, Xingji Li, Shiyu He, Mujie Lan, Liyi Xiao, Chaoming Liu, Jianchun Liu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 716:10-14
The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7590de04a0e20c242553898fac7f2b00
https://doi.org/10.1016/j.nima.2013.03.055
https://doi.org/10.1016/j.nima.2013.03.055
Autor:
Chaoming Liu, Hongbin Geng, Jingdong Xiao, Xingji Li, Dezhuang Yang, Zhiming Zhao, He Shiyu, Mujie Lan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 621:707-712
Electrical degradation of two type NPN bipolar junction transistors (BJTs) with different emitter sizes was examined under exposures of 70 and 110 keV electrons. Base and collector currents as a function of base–emitter voltage were in-situ measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b8a3b48b3f2a3cdd8971d9474a796cc
https://doi.org/10.1016/j.nima.2010.04.068
https://doi.org/10.1016/j.nima.2010.04.068
Radiation effects on silicon bipolar transistors caused by 3–10MeV protons and 20–60MeV bromine ions
Publikováno v:
Physica B: Condensed Matter. 405:1489-1494
The current gain degradation in silicon NPN bipolar junction transistors (BJTs) was examined under irradiation with 3–10 MeV protons and 20–60 MeV bromine (Br) ions with various dose levels. To characterize the radiation damage of the NPN BJTs, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc53b586bd3f3e7531c47e1824685e07
https://doi.org/10.1016/j.physb.2009.12.027
https://doi.org/10.1016/j.physb.2009.12.027
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 612:171-175
The radiation responses of the NPN bipolar junction transistors (BJTs) and the TTL bipolar integrated circuits (ICs) have been examined using 20, 40 and 60 MeV Br ions. Key electric parameter was measured and compared after each energy irradiation. E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d443abeb38b7f76ffc4339b7b8c85ea
https://doi.org/10.1016/j.nima.2009.10.165
https://doi.org/10.1016/j.nima.2009.10.165
Publikováno v:
SPIE Proceedings.
The configurations of electrochemical silicon etch-stop are discussed in this paper. An electrochemical etching machine with software and hardware, which can control the etching process of silicon very well, is designed and fabricated bas don the the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612b4b9fd5b39c782fa8cb2f832008d2
https://doi.org/10.1117/12.440238
https://doi.org/10.1117/12.440238
Publikováno v:
SPIE Proceedings.
Chalcogenide alloys Sb x Se y are being applied to phase-change, reversible optical storage. The non- stoichiometric compound are researched displaying their interesting phenomena before and after anneal in a furnace, which were characterized by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea5e39124ca7d4786b8ddc3709e9c64
https://doi.org/10.1117/12.290189
https://doi.org/10.1117/12.290189
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