Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Muhitdin Ahmetoğlu"'
Publikováno v:
In Thin Solid Films 2012 520(6):2106-2109
Publikováno v:
Applied Surface Science. 601:154217
Autor:
Afrailov, Muhitdin Ahmetoglu
Publikováno v:
In Infrared Physics and Technology 2010 53(1):29-32
Publikováno v:
In Thin Solid Films 2008 516(6):1227-1231
Autor:
M. Ahmetoglu Afrailov
Publikováno v:
Thin Solid Films. 520:5014-5017
The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R 0 A product were investigated at different temperatures. The current–voltage characteristics of n -GaSb
Autor:
Muhitdin Ahmetoglu Afrailov
Publikováno v:
Infrared Physics & Technology. 53:29-32
The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6–3.5 μm are reported
Autor:
M.A. Afrailov, I. Tapan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 510:92-96
Bu çalışma, 06-08 Ekim 1999 tarihleri arasında Siegen[Almanya]’da düzenlenen 1. International Symposium on Applications of Particle Detectors in Medicine, Biology and Astrophysics (SAMBA 99)’da bildiri olarak sunulmuştur. In this work, we h
Autor:
Muhitdin Ahmetoglu Afrailov
Dark current–voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebffd0a669f18a06bbf14e444134aead
http://hdl.handle.net/11452/27328
http://hdl.handle.net/11452/27328