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pro vyhledávání: '"Muhammadjon G. Dadamirzaev"'
Publikováno v:
East European Journal of Physics, Iss 2, Pp 372-379 (2024)
In the fabrication of 3D p-n junctions, doping or surface modification caused by ion injection changes the electrical properties and crystal structure of the semiconductor. In addition, as the size of the semiconductor device decreases, various quant
Externí odkaz:
https://doaj.org/article/86de7706e6534dc5ad0f2c36fd8565a2
