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pro vyhledávání: '"Muhammad Tauseef Rab"'
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 22:2017-2024
One way to organize 3-D memories is cell arrays stacked on logic where the upper die layers contain the cell arrays and the bottom layer implements the peripheral logic. A new degree of freedom exists when constructing 3-D memories, which is that the
Publikováno v:
DFT
A new methodology for improving memory repair is presented which can be applied in either manufacture time repair or built-in self-repair (BISR) scenarios. In traditional memory repair, one spare column can only replace one column containing a defect
Publikováno v:
2009 IEEE International Conference on IC Design and Technology.
Dynamic cache resizing coupled with Built In Self Test (BIST) is proposed to enhance yield of SRAM-based cache memory. BIST is used as part of the power-up sequence to identify the faulty memory addresses. Logic is added to prevent access to the iden