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Autor:
Hassan Gargouri, Bernd Garke, Marco Lisker, Bodo Kalkofen, Muhammad S. K. Bukhari, Akinwumi A. Amusan, Edmund P. Burte
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:031512
Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled p