Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Muhammad M. Mirza"'
Autor:
Peter Vines, Kateryna Kuzmenko, Jarosław Kirdoda, Derek C. S. Dumas, Muhammad M. Mirza, Ross W. Millar, Douglas J. Paul, Gerald S. Buller
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
By incorporating germanium, single-photon avalanche diode detectors using silicon-based platforms are applied to infrared light detection. Here, a cost-effective planar detector geometry is presented yielding high detection efficiency suitable for ap
Externí odkaz:
https://doaj.org/article/6df197a3f26a400bb6bdf6c90048f646
Autor:
Muhammad M. Mirza, Felix J. Schupp, Jan A. Mol, Donald A. MacLaren, G. Andrew D. Briggs, Douglas J. Paul
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate
Externí odkaz:
https://doaj.org/article/43a822918176408ba22986aa9ee34ad2
Autor:
Jasgit C. Sachdev, Saira Ahmed, Muhammad M. Mirza, Aamer Farooq, Lori Kronish, Mohammad Jahanzeb
Publikováno v:
Breast Cancer: Basic and Clinical Research, Vol 4 (2010)
Background There is discordance among studies assessing the impact of race on outcome of patients with Triple Negative Breast Cancer (TNBC). We assessed survival outcomes for African American (AA) versus Caucasian (CA) women with TNBC treated at an u
Externí odkaz:
https://doaj.org/article/07818757a3414b89a7967d753b79852b
Autor:
David Stark, Chiara Ciano, Michele Ortolani, Giovanni Capellini, Monica De Seta, Luca Persichetti, Giacomo Scalari, Mattias Beck, Jérôme Faist, Sergej Markmann, Thomas Grange, Douglas J. Paul, Michele Virgilio, Michele Montanari, Stefan Birner, Muhammad M. Mirza, Cedric Corley, Luciana Di Gaspare
We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-Type Ge/SiGe heterostructures. This is an important step towards the realization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff34af281c1930c43e0d90945840f9b6
https://eprints.gla.ac.uk/259744/1/259744.pdf
https://eprints.gla.ac.uk/259744/1/259744.pdf
Autor:
David Stark, Giacomo Scalari, Luciana Di Gaspare, Chiara Ciano, Sergej Markmann, Cedric Corley, Michele Ortolani, Luca Persichetti, Stefan Birner, Muhammad M. Mirza, Michele Virgilio, Michele Montanari, Giovanni Capellini, Jérôme Faist, Thomas Grange, Douglas J. Paul, Monica De Seta, Mattias Beck
Publikováno v:
Scopus-Elsevier
The Quantum Cascade Laser (QCL) has been demonstrated in polar III-V semiconductor materials employing transitions between conduction band states [1] . Harnessing intersubband transitions allows lasing at mid-infrared and far-infrared wavelengths. Bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6c74a058c3931bba3718b88758056d6
https://doi.org/10.1109/cleo/europe-eqec52157.2021.9541838
https://doi.org/10.1109/cleo/europe-eqec52157.2021.9541838
Autor:
Luca Persichetti, Thomas Grange, Luciana Di Gaspare, Stefan Birner, Muhammad M. Mirza, Douglas J. Paul, Giovanni Capellini, David Stark, Michele Virgilio, Michele Montanari, Michele Ortolani, Monica De Seta, Giacomo Scalari, Jérôme Faist
Publikováno v:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV.
We report electroluminescence at 14meV and 20meV from a n-type Ge/Si0.15Ge0.85 quantum cascade heterostructure on Si substrate grown by ultra-high vacuum chemical vapour deposition. The electroluminescence signal of the single quantum well active reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9da08561243d1c5200e7e3d24313f3
https://doi.org/10.1117/12.2578823
https://doi.org/10.1117/12.2578823
Autor:
C. L. Manganelli, Oliver Skibitzki, M. De Seta, Muhammad M. Mirza, Giovanni Capellini, G. Luongo, Davide Spirito, Inga A. Fischer, H. Tetzner, Douglas J. Paul
The present work investigates the role of threading dislocation densities (TDD) in the low density regime on the vertical transport in Si0.06Ge0.94 heterostructures integrated on Si(001). The use of unintentionally doped Si0.06Ge0.94 layers enables t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ee681cf0466e89a8927c0f87eee3d86
https://eprints.gla.ac.uk/257461/1/257461.pdf
https://eprints.gla.ac.uk/257461/1/257461.pdf
Autor:
Monica De Seta, Michele Montanari, Luca Persichetti, Thomas Grange, Mattias Beck, G. Scalari, David Stark, Michele Virgilio, Sergej Markmann, Chiara Ciano, Jérôme Faist, Stefan Birner, Muhammad M. Mirza, Luciana Di Gaspare, Cedric Corley, Douglas J. Paul, Giovanni Capellini, Michele Ortolani
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 118 (10)
Applied Physics Letters, 118 (10)
© 2021 Author(s). We report electroluminescence originating from L-valley transitions in n-type Ge/Si0.15Ge0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ f / f ≈ 0.2. Three strain-compensated heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8109df58ec3bde9f27c9d52b27d59374
Autor:
Ross W. Millar, Peter Vines, Zoe M. Greener, Aurora Maccarone, Aongus McCarthy, Derek C. S. Dumas, Lourdes Ferre Llin, Douglas J. Paul, Kateryna Kuzmenko, Jaroslaw Kirdoda, Muhammad M. Mirza, Gerald S. Buller, Abderrahim Halimi, Robert J. Collins
Publikováno v:
Optics express. 28(2)
We present a scanning light detection and ranging (LIDAR) system incorporating an individual Ge-on-Si single-photon avalanche diode (SPAD) detector for depth and intensity imaging in the short-wavelength infrared region. The time-correlated single-ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0165a12c363e927108179c7e8f67cc64
https://pubmed.ncbi.nlm.nih.gov/32121846
https://pubmed.ncbi.nlm.nih.gov/32121846
Autor:
Vihar P. Georgiev, C. Riddet, Ewan Towie, Fikru Adamu-Lema, Asen Asenov, Alexandru-Iustin Dochioiu, Douglas J. Paul, Donald A. MacLaren, Muhammad M. Mirza, Salvatore Maria Amoroso
Publikováno v:
IEEE Transactions on Nanotechnology
The experimental results from 8 nm diameter silicon nanowire junctionless field-effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/ $\mu$ m for 1.0 V and 2.52 mA/ $\mu$ m for 1.8 V gate overdrive w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f8dfec33055008e7c76ca207f78c7ec
https://doi.org/10.1109/tnano.2017.2665691
https://doi.org/10.1109/tnano.2017.2665691