Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Muhammad Elgamal"'
Publikováno v:
2022 International Telecommunications Conference (ITC-Egypt).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eef7b8b351ad1e4f20eb13ffb0434b9
https://doi.org/10.1109/itc-egypt55520.2022.9855731
https://doi.org/10.1109/itc-egypt55520.2022.9855731
Publikováno v:
Pramana. 96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc47fa3807e4062774f57b9a7d37d8b9
https://doi.org/10.1007/s12043-022-02341-y
https://doi.org/10.1007/s12043-022-02341-y
Autor:
Muhammad Elgamal
Publikováno v:
Journal of Computational Electronics. 19:1068-1076
The double-gate tunneling field-effect transistor (DGTFET) is investigated with two channel lengths (50 and 20 nm), along with the effect of the variation of the device design on its overall direct-current (DC) and radiofrequency (RF) performance. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6918023788028674f1aa95201c47cbab
https://doi.org/10.1007/s10825-020-01492-8
https://doi.org/10.1007/s10825-020-01492-8
Publikováno v:
2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES).
This study presents a 2-D analytical model for the double gate tunnel FET (DG-TFET). The model considers the gate-on-source overlap that may occur intentionally or unintentionally due to fabrication tolerances. The 2-D Poisson's equation is solved in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2df78908f582c61c8bb9e6cdcb6f4c24
https://doi.org/10.1109/niles53778.2021.9600102
https://doi.org/10.1109/niles53778.2021.9600102
Autor:
Ahmed Shaker, Muhammad Elgamal
Publikováno v:
2021 3rd Novel Intelligent and Leading Emerging Sciences Conference (NILES).
There is always a great demand for TFET analytical models to understand its underlined physics. One of the most widely known and citable models is the pseudo model as it gives satisfying results compared to TCAD simulations. However, the calculation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d5318207183a012723562d1a747c371
https://doi.org/10.1109/niles53778.2021.9600561
https://doi.org/10.1109/niles53778.2021.9600561
Publikováno v:
Pramana. 95
The tunnel FET (TFET) is considered a promising candidate which can be used in the design of digital and analog circuits in low-power applications. Due to fabrication tolerances, it is not guaranteed that the gate electrode is perfectly aligned on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45819ac4c2ae78335835602bf0c06a33
https://doi.org/10.1007/s12043-021-02157-2
https://doi.org/10.1007/s12043-021-02157-2
Publikováno v:
2021 International Telecommunications Conference (ITC-Egypt).
Silicon double gate tunneling field effect transistors, DGTFETs are suitable candidates for integration with current CMOS technology. Although their high ON/OFF current ratio and low subthreshold swing, they suffer from unwanted ambipolar conduction.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe3098a0005cd502ce756bc6f074443
https://doi.org/10.1109/itc-egypt52936.2021.9513889
https://doi.org/10.1109/itc-egypt52936.2021.9513889
Autor:
Muhammad Elgamal
Publikováno v:
2020 International Conference on Innovative Trends in Communication and Computer Engineering (ITCE).
In In this paper we investigate a double-gated tunneling FET, DGTFET, with two channel lengths (50 and 20 nm) and the effect of device design variation on its DC and RF collective performance. The studied design parameters are drain doping abruptness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c297b465d450e47bca9522b54aaee6
https://doi.org/10.1109/itce48509.2020.9047768
https://doi.org/10.1109/itce48509.2020.9047768
Autor:
Ahmed Shaker, Aya Sinjab, Muhammad Elgamal, Maritime Transport,Heliopolis,Cairo, Egypt, Mostafa Fedawy
Publikováno v:
International Journal of Integrated Engineering. 11
Tunnel Field Effect Transistor (TFET) can be considered as one of the promising transistors because it can switch ON and OFF at lower voltages than the operation voltage of the metal oxide semiconductor field effect transistor (MOSFET). This paper pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2186dd7cf800943af687b291e565a93d
https://doi.org/10.30880/ijie.2019.11.07.006
https://doi.org/10.30880/ijie.2019.11.07.006
Autor:
Muhammad Elgamal
Publikováno v:
Journal of Physics: Conference Series. 1447:012020
In this paper the digital and analogue performance of double-gate tunnelling FET, DGTFET, is reported, when a pocket of different dielectric is inserted near the source, drain or both. The variation of these pocket lengths and their relative shift to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab616cbf501b3be8a2a1ea908a10b2eb
https://doi.org/10.1088/1742-6596/1447/1/012020
https://doi.org/10.1088/1742-6596/1447/1/012020