Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Muhaimin Haziq"'
Publikováno v:
Results in Physics, Vol 64, Iss , Pp 107952- (2024)
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using CO
Externí odkaz:
https://doaj.org/article/f480d83f390f45ea9ef7028d6ff7f806
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2133 (2022)
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor
Externí odkaz:
https://doaj.org/article/7ce53479f1c149eb8aef0bd5ec6c368d
Publikováno v:
Key Engineering Materials. 947:15-20
Lateral GaN devices, with a substantial critical breakdown field and increased mobility of two-dimensional electron gas (2DEG), are particularly promising for future power applications. Despite low power consumption by design, further improvements ar