Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Muh-ling Ger"'
Autor:
Jiang-Kai Zuo, Muh-Ling Ger, Pete Rodriquez, Xin Lin, Xu Cheng, Won Gi Min, Hongning Yang, Paul Hui, Zhihong Zhang
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We report our development of a novel NLDMOS in SOI based smart power technology, integrated into Freescale's 0.13μm CMOS platform. The new NLDMOS not only achieves BVDSS up to 140V in both low side and high side operations, but more importantly, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1649dd049efc6670e5392d92e05c0565
https://doi.org/10.1109/ispsd.2013.6694421
https://doi.org/10.1109/ispsd.2013.6694421
Autor:
Richard B. Brown, Muh-Ling Ger
Publikováno v:
Journal of Materials Research. 10:1710-1720
Tungsten silicide (WSix) thin tilms have been investigated for use as integrated circuit interconnect and self-aligned MESFET (metal-semiconductor field-effect transistor) gates because of their low resistivity and thermal and chemical stability. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::278a193034873fdea3cc863578b421b8
https://doi.org/10.1557/jmr.1995.1710
https://doi.org/10.1557/jmr.1995.1710
Autor:
Vishnu K. Khemka, Ronghua Zhu, Xu Cheng, Pete Rodriquez, Bernard Grote, Paul Hui, Weixiao Huang, Muh-Ling Ger, Tahira Khan
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442de99d57ea1103a16128bc134b4b9b
https://doi.org/10.1109/ispsd.2009.5157989
https://doi.org/10.1109/ispsd.2009.5157989
Autor:
Muh-Ling Ger, Ronghua Zhu, Cheng Xu, Weixiao Huang, Paul Hui, Vishnu K. Khemka, Pete Rodriquez, Yue Fu, Tahira Khan
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
In this paper, a novel Schottky diode structure based on the superjunction concept is proposed. The concept is based on 2-carrier current conduction and utilizes both P and N columns for current conduction. The proposed device utilized the P and N su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ac2137a35de39cdb270f9b92e18b0f
https://doi.org/10.1109/ispsd.2009.5158009
https://doi.org/10.1109/ispsd.2009.5158009
Autor:
Xu Cheng, Vishnu K. Khemka, Paul Hui, Weixiao Huang, Pete Rodriquez, Tahira Khan, Yue Fu, Muh-Ling Ger, Ronghua Zhu
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
We report on the experimental demonstration of revolutionary 5.5 V zero-channel power MOSFETs with record low specific on-resistance of 1.0 m#x2126;·mm2 and Figure of Merit (R on ×Q g ) of 8.4 m#x2126;·nC with optimized metal layout. This novel de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2491d13df642b2ada7aaa6f3e9c9710
https://doi.org/10.1109/ispsd.2009.5158066
https://doi.org/10.1109/ispsd.2009.5158066
Publikováno v:
1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.
The MMAS40G is a highly miniaturized accelerometer developed for automotive applications. This two-chip system includes a capacitive micromechanical silicon chip and an associated CMOS integrated circuit for interfacing and signal conditioning each w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::616df849241f6fcf995dbaa2885fcab2
https://doi.org/10.1109/iscas.1996.539828
https://doi.org/10.1109/iscas.1996.539828
Publikováno v:
IEEE Proceedings on Micro Electro Mechanical Systems, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots..
Characteristics of sputter-deposition, patterning, and sacrificial-layer etching for the formation of free-standing molybdenum structures are described. Stress measurement, etching, and deposition techniques are discussed. It is shown that sacrificia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37dc4f71abc7d1cf631b4a6118a7a060
https://doi.org/10.1109/memsys.1990.110253
https://doi.org/10.1109/memsys.1990.110253
Autor:
Muh-Ling Ger, Richard B. Brown
Publikováno v:
MRS Proceedings. 276
Refractory metal silicides, such as tungsten silicide (WSix), have been used for integrated circuit interconnect and self-aligned MESFET gates because of their low resistivity and thermal and chemical stability. These same characteristics make refrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48ff42bbb16d56c138e653deb885a3b
https://doi.org/10.1557/proc-276-283
https://doi.org/10.1557/proc-276-283
Autor:
Khemka, V., Ronghua Zhu, Khan, T., Weixiao Huang, Yue Fu, Cheng Xu, Hui, P., Muh-ling Ger, Rodriquez, P.
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p92-95, 4p
Autor:
Khan, T., Khemka, V., Ronghua Zhu, Weixiao Huang, Xu Cheng, Hui, P., Muh-ling Ger, Grote, B., Rodriquez, P.
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p13-16, 4p