Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Muh-Wang Liang"'
Autor:
Muh-Wang Liang, 梁沐旺
96
Under bump metallization (UBM) provides good adhesion between the bonding pads and the bumps, and serves as a diffusion barrier, wetting, and protective layer for flip-chip bonding. Both Au and Cu are so-called fast diffusers in Sn, and can d
Under bump metallization (UBM) provides good adhesion between the bonding pads and the bumps, and serves as a diffusion barrier, wetting, and protective layer for flip-chip bonding. Both Au and Cu are so-called fast diffusers in Sn, and can d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89341774076790704388
Autor:
Huang-Ming Lee, Po-Chou Chen, Kartik Chandra Sahoo, Muh-Wang Liang, S.H. Chen, Edward Yi Chang, Tsung-Eong Hsieh, Chun Wei Chang
Publikováno v:
Japanese Journal of Applied Physics. 46:2848-2851
The use of a Cu/Pt/Ti Schottky contact structure and Cu-based airbridges for high-frequency metamorphic high electron mobility transistor (MHEMT) is successfully developed. The material characteristics of the Cu/Pt/Ti Schottky contact on iInAlAs were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1186113179304da4ee102791dbe14957
https://doi.org/10.1143/jjap.46.2848
https://doi.org/10.1143/jjap.46.2848
Publikováno v:
Journal of Electronic Materials. 35:1593-1599
The capability of a cobalt-phosphorous [Co(P)] layer, which was grown via the electroless plating process, to serve as the diffusion barrier of lead-tin (PbSn) solder was investigated in this work. The Auger electron spectroscopy (AES) and energy dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90955e60cb54b398e9bf392ae92cc8a9
https://doi.org/10.1007/s11664-006-0153-6
https://doi.org/10.1007/s11664-006-0153-6
Autor:
Chung-Yuan Lee, P.-I. Lee, Muh-Wang Liang, S.-J. Lin, Shian-Hau Liao, Shi-Ming Chiang, Chao-Sung Lai
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:644-648
For the first time, a novel and simple trench bottle integrated process is demonstrated on dynamic random access memory (DRAM) manufacturing by selective liquid phase deposition (S-LPD) oxide. After photoresist (PR) filled into a deep trench (DT) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d5ce05e119c90190ae60069a4a6a66b
https://doi.org/10.1109/tsm.2005.858527
https://doi.org/10.1109/tsm.2005.858527
Publikováno v:
Japanese Journal of Applied Physics. 43:8258-8266
In this work, we studied the application of electroless copper/nickel (Cu/Ni) films deposited on aluminum nitride (AlN) substrates to high-frequency power GaAs device packaging. Experimental results showed metal films deposited on polished AlN surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098b2dac3f7a5fa2c90a540be5c68840
https://doi.org/10.1143/jjap.43.8258
https://doi.org/10.1143/jjap.43.8258
Publikováno v:
Journal of Electronic Materials. 32:952-956
The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f69ca0b0a05522ba9365e16b7353ef8
https://doi.org/10.1007/s11664-003-0229-5
https://doi.org/10.1007/s11664-003-0229-5
Autor:
Binh Tinh Tran, Chia-Hua Chang, Fu-Ching Tung, Man-Chi Huang, Yueh-Chin Lin, S. S. Tang, Edward Yi-Chang, Muh-Wang Liang, Kung-Liang Lin, Fang-Ming Li, Ching Hsiang Hsu
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
In this report, we studied the fabrication of heterojunction with intrinsic thin layer (HIT) solar cell, which was deposited by using very high frequency chemical vapor deposition (VHF-PECVD), at a high deposition rate under a low process temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f666eda76c996e0690b7c571a5ca8ae2
https://doi.org/10.1109/pvsc.2011.6186575
https://doi.org/10.1109/pvsc.2011.6186575
Publikováno v:
2009 IEEE International Conference on Plasma Science - Abstracts.
In this study, we present a rigorous 2-D mathematical model for the analysis of plasma density, ion density, and electron temperature in a capacitively coupled plasma under different operating conditions. The model is based on the solutions of conser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37297edfa83ecb6f73c83f513ff00cbc
https://doi.org/10.1109/plasma.2009.5227362
https://doi.org/10.1109/plasma.2009.5227362
Autor:
Ryo Morisawa, Akira Shirakura, David Ch Wu, Muh Wang Liang, Chen Chung Du, Tetsuya Suzuki, Jen Rong Huang
Publikováno v:
MRS Proceedings. 1211
Effects of very high frequency- plasma enhanced chemical vapor deposition (VHF-PECVD) using diluted ultrapure silane at higher dilution ratio (R>30) on microstructures and optical characteristics of hydrogenated nanocrystalline silicon (nc-Si:H) film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a90afcacfbf8d02383538e5445c5aed
https://doi.org/10.1557/proc-1211-r03-12
https://doi.org/10.1557/proc-1211-r03-12
Autor:
Shian-Jyh Lin, Chao-Sung Lai, Shian-Hau Liao, Chung-Yuan Lee, Pei-Ing Lee, Shi-Ming Chiang, Muh-Wang Liang
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Nov2005, Vol. 18 Issue 4, p644-648, 5p