Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Muff, Stefan"'
Autor:
Guedes, Eduardo B., Muff, Stefan, Brito, Walber H., Caputo, Marco, Plumb, Nicholas C., Dil, J. Hugo, Radović, Milan
The two-dimensional electron gas found at the surface of SrTiO$_3$ and related interfaces has attracted significant attention as a promising basis for oxide electronics. In order to utilize its full potential, the response of this 2DEG to structural
Externí odkaz:
http://arxiv.org/abs/2102.10973
Autor:
Guedes, Eduardo B., Muff, Stefan, Fanciulli, Mauro, Weber, Andrew P., Caputo, Marco, Wang, Zhiming, Plumb, Nicholas C., Radović, Milan, Dil, J. Hugo
Publikováno v:
Phys. Rev. Research 2, 033173 (2020)
The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its pro
Externí odkaz:
http://arxiv.org/abs/1908.07379
Autor:
Weber, Andrew P., Rüßmann, Philipp, Xu, Nan, Muff, Stefan, Fanciulli, Mauro, Magrez, Arnaud, Bugnon, Philippe, Berger, Helmuth, Plumb, Nicholas C., Shi, Ming, Blügel, Stefan, Mavropoulos, Phivos, Dil, J. Hugo
Publikováno v:
Phys. Rev. Lett. 121, 156401 (2018)
The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the n
Externí odkaz:
http://arxiv.org/abs/1807.00339
Autor:
Muff, Stefan, Pilet, Nicolas, Fanciulli, Mauro, Weber, Andrew P., Wessler, Christian, Ristic, Zoran, Wang, Zhiming, Plumb, Nicholas C., Radovic, Milan, Dil, J. Hugo
Publikováno v:
Phys. Rev. B 98, 045132 (2018)
Observation of Bloch oscillations and Wannier-Stark localization of charge carriers is typically impossible in single-crystals, because an electric field higher than the breakdown voltage is required. In BaTiO$_3$ however, high intrinsic electric fie
Externí odkaz:
http://arxiv.org/abs/1710.02421
Autor:
Muff, Stefan, Fanciulli, Mauro, Weber, Andrew P., Pilet, Nicolas, Ristic, Zoran, Wang, Zhiming, Plumb, Nicholas C., Radovic, Milan, Dil, J. Hugo
The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO$_3$, grown by
Externí odkaz:
http://arxiv.org/abs/1705.09495
Autor:
Fanciulli, Mauro, Volfová, Henrieta, Muff, Stefan, Braun, Jürgen, Ebert, Hubert, Minár, Jan, Heinzmann, Ulrich, Dil, J. Hugo
Publikováno v:
Phys. Rev. Lett. 118, 067402 (2017)
After photon absorption, electrons from a dispersive band of a solid require a finite time in the photoemission process before being photoemitted as free particles, in line with recent attosecondresolved photoemission experiments. According to the Ei
Externí odkaz:
http://arxiv.org/abs/1601.07309
Autor:
Queiroz, Raquel, Landolt, Gabriel, Muff, Stefan, Slomski, Bartosz, Schmitt, Thorsten, Strocov, Vladimir N., Mi, Jianli, Iversen, Bo Brummerstedt, Hofmann, Philip, Osterwalder, Jürg, Schnyder, Andreas P., Dil, J. Hugo
Publikováno v:
Phys. Rev. B 93, 165409 (2016)
We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be model
Externí odkaz:
http://arxiv.org/abs/1512.06068
Autor:
Pielmeier, Florian, Landolt, Gabriel, Slomski, Bartosz, Muff, Stefan, Berwanger, Julian, Eich, Andreas, Khajetoorians, Alexander A., Wiebe, Jens, Aliev, Ziya S., Babanly, Mahammad B., Wiesendanger, Roland, Osterwalder, Jürg, Chulkov, Evgeniy V., Giessibl, Franz J., Dil, J. Hugo
Publikováno v:
New J. Phys. 17 (2015) 023067
Through a combination of experimental techniques we show that the topmost layer of the topo- logical insulator TlBiSe$_2$ as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temp
Externí odkaz:
http://arxiv.org/abs/1502.01112
Autor:
Slomski, Bartosz, Landolt, Gabriel, Muff, Stefan, Meier, Fabian, Osterwalder, Jürg, Dil, J. Hugo
Publikováno v:
New Journal of Physics 15, 125031 (2013)
Using spin and angle-resolved photoemission spectroscopy we investigate a momentum region in Pb quantum well states on Si(111) where hybridization between Rashba-split bands alters the band structure significantly. Starting from the Rashba regime whe
Externí odkaz:
http://arxiv.org/abs/1306.0245
Separating the bulk and surface n- to p-type transition in the topological insulator GeBi(4-x)SbxTe7
Autor:
Muff, Stefan, von Rohr, Fabian, Landolt, Gabriel, Slomski, Bartosz, Schilling, Andreas, Cava, Robert J., Osterwalder, Jürg, Dil, J. Hugo
Publikováno v:
Phys. Rev. B 88, 035407 (2013)
We identify the multi-layered compound GeBi4Te7 to be a topological insulator with a freestanding Dirac point, slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisf
Externí odkaz:
http://arxiv.org/abs/1304.7648