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Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) technique. The experiments were carried out using resistive furnace with temperature gradient of 10 0C/cm. The 4N grade Gallium (Ga) Indium (In) and Antimon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::428fbdfe1c21b9ef59237602526a3b97
Autor:
Yenorkar, Surendra M., Zade, Ramesh N., Mude, Bhupesh M., Mayekar, Vijay M., Mude, Kushal M., Raulkar, Kishor B., Mistry, Ranjeet R., Patange, A.N.
Publikováno v:
Macromolecular Symposia; Dec2021, Vol. 400 Issue 1, p1-5, 5p
