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pro vyhledávání: '"Muchnikov, A."'
Akademický článek
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Autor:
Ratnikova, A.K., Dukhnovsky, M.P., Fedorov, Yu.Yu., Zemlyakov, V.E., Muchnikov, A.B., Vikharev, A.L., Gorbachev, A.M., Radishev, D.B., Altukhov, A.A., Mitenkin, A.V.
Publikováno v:
In Diamond & Related Materials 2011 20(8):1243-1245
Publikováno v:
In Diamond & Related Materials 2011 20(8):1225-1228
Autor:
Muchnikov, A.B., Vikharev, A.L., Gorbachev, A.M., Radishev, D.B., Blank, V.D., Terentiev, S.A.
Publikováno v:
In Diamond & Related Materials 2010 19(5):432-436
Autor:
Radishev D.B., Vikharev A.L., Gorbachev A.M., Muchnikov A.B., Yunin P.A., Amosov V.N., Rodionov N.B.
Publikováno v:
EPJ Web of Conferences, Vol 149, p 02029 (2017)
Externí odkaz:
https://doaj.org/article/627bc30eb7744030b1f0fc6b29d460d1
Autor:
A. L. Viharev, O. I. Khrykin, M. N. Drozdov, V. I. Shashkin, Vladimir A. Isaev, V. V. Chernov, D. E. Batler, A. V. Murel, E. V. Demidov, D. B. Radishchev, A. M. Gorbachev, A. B. Muchnikov, M. A. Lobaev, S. A. Bogdanov, E. A. Surovegina
Publikováno v:
Semiconductors. 50:1569-1573
The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8f092130322027fabf9110398295daa
https://doi.org/10.1134/s1063782616120204
https://doi.org/10.1134/s1063782616120204
Autor:
Vladimir A. Isaev, S. A. Bogdanov, Yu. N. Drozdov, Pavel A. Yunin, V. V. Chernov, A. B. Muchnikov
Publikováno v:
Semiconductors. 50:1622-1625
Methods of the experimental diagnostics and control of the misorientation angle for single-crystal HPHT (High Pressure High Temperature) diamond substrates are discussed. Such substrates are used for the homoepitaxial growth of doped and undoped CVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1374b60a6e490098287fbb0f6d99074
https://doi.org/10.1134/s1063782616120289
https://doi.org/10.1134/s1063782616120289
Autor:
M. N. Drozdov, Yuri N. Drozdov, Anatoly V. Mitenkin, A. L. Vikharev, Pavel A. Yunin, A. B. Muchnikov, D.B. Radishev, A. M. Gorbachev
Publikováno v:
Journal of Crystal Growth. 442:62-67
Detailed description of a way to accrete diamond single crystals in one plate using the CVD method is presented. It was found that each region of the mosaic CVD diamond crystal grown over a certain seed substrate “inherits” the crystallographic o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee82b491972873c6d0b07813e1f26c84
https://doi.org/10.1016/j.jcrysgro.2016.02.026
https://doi.org/10.1016/j.jcrysgro.2016.02.026
Autor:
V. V. Chernov, M. N. Drozdov, Vladimir A. Isaev, S. A. Bogdanov, A. L. Vikharev, A. M. Gorbachev, J.E. Butler, A. B. Muchnikov, M. A. Lobaev, D.B. Radishev
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 10:324-327
We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta-doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::701a028aaa4ee0512fb7d2d01a8e06af
https://doi.org/10.1002/pssr.201510453
https://doi.org/10.1002/pssr.201510453
Autor:
Yu. N. Drozdov, J.E. Butler, S. A. Bogdanov, V. V. Chernov, Vladimir A. Isaev, A. B. Muchnikov, A. I. Okhapkin, A. L. Vikharev, Pavel A. Yunin
Publikováno v:
physica status solidi (a). 212:2572-2577
The surface morphology of vicinal (100) single-crystal diamond surfaces homoepitaxially grown in a microwave plasma-assisted chemical vapor deposition (MPACVD) reactor is studied. High-pressure and high-temperature (HPHT) single-crystal diamond subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::602b1a50675edc909e6b082a226fbe7e
https://doi.org/10.1002/pssa.201532171
https://doi.org/10.1002/pssa.201532171