Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Mubashir A. Kharadi"'
Autor:
Mubashir A. Kharadi, Jhuma Saha
Publikováno v:
Journal of Materials Science. 57:21324-21338
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af9c5c100303c7c4e81235bdb32eec8
https://doi.org/10.1007/s10853-022-07970-7
https://doi.org/10.1007/s10853-022-07970-7
Publikováno v:
IEEE Transactions on Electron Devices. 68:5095-5100
In this article, for the first time, we propose a silicene-based spin filter having a TFET configuration. The device portrays a voltage-dependent spin polarization and achieves a “spin polarization” as high as 98% at a minimal “operating voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56394a630698f5c70b8a17e119d56dcc
https://doi.org/10.1109/ted.2021.3106279
https://doi.org/10.1109/ted.2021.3106279
Autor:
Gul Faroz Ahmad Malik, Mubashir Ahmad Kharadi, Farooq Ahmad Khanday, Zaid Mohammad Shah, Sparsh Mittal
Publikováno v:
Emerging Applications of Low Dimensional Magnets ISBN: 9781003196952
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ae52e3a959a4c63ef5a0826700787e5
https://doi.org/10.1201/9781003196952-4
https://doi.org/10.1201/9781003196952-4
Publikováno v:
IEEE Transactions on Electron Devices. 68:138-143
In this article, we report that the photoconductive gain of the photodetector can be appreciably increased by forming a heterojunction between silicene and MoS2. To the best of the authors’ knowledge, it is for the first time that the silicene/MoS2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd5ddbcacf159fe1cffea9cada45cff2
https://doi.org/10.1109/ted.2020.3037285
https://doi.org/10.1109/ted.2020.3037285
Autor:
Khurshed A. Shah, Mubashir A. Kharadi, Farooq Ahmad Khanday, Nusrat Parveen, Gul Faroz A. Malik
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 11:301-306
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::533b2e9cc8b7f97b242a7a18a2e83033
https://doi.org/10.17586/2220-8054-2020-11-3-301-306
https://doi.org/10.17586/2220-8054-2020-11-3-301-306
Publikováno v:
IET Circuits, Devices & Systems. 14:464-470
In this study, an InAs channel-based triple gate spin-field effect transistor (FET) model is proposed. The proposed triple-gate spin-FET offers a high density of integration, consumes low power and offers very high switching speed. By incorporating t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cde0597d080984a675c9ec135b478fff
https://doi.org/10.1049/iet-cds.2019.0329
https://doi.org/10.1049/iet-cds.2019.0329
Autor:
Mohamed A. Abdelkawy, Roy Abi Zeid Daou, Gaby Abou Haidar, S.M. AL-Mekhlafi, Pratap Anbalagan, Muhammad Arfan, Karima Boudaraia, Yassine Boukal, Giro Candelario, Youness Chatibi, Mohamed Cherkaoui, Alicia Cordero, Antonio Coronel-Escamilla, Stevan M. Cvetićanin, Mohammad Rafiq Dar, Eid H. Doha, Mohamed F. El-Amin, Yassine El houm, El Hassan El Kinani, Ahmed S. Elwakil, Samer S. Ezz-Eldien, Hamidreza Ghazisaeedi, Mohamed S. Ghoneim, Evren Hincal, Rabha W. Ibrahim, Nasir Ali Kant, Rajib Kar, Abdellatif Kasbi, Farooq Ahmad Khanday, Mubashir Ahmad Kharadi, Moussa Labbadi, Ahmed H. Madian, Shibendu Mahata, Shakeel Ahmad Malik, Durbadal Mandal, Menna Mohsen, Xavier Moreau, Abdelaziz Ouhadan, Ahmed G. Radwan, Abderrafii Rahali, Raja Ramachandran, Lobna A. Said, Fidel Santamaria, Kamal Shah, Ivanka Stamova, N.H. Sweilam, Mohammad Saleh Tavazoei, Juan R. Torregrosa, Rohisha Tuladhar, Aman Ullah, María P. Vassileva, Mahmoud A. Zaky, Dušan Zorica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b6407b345c12ef686154db43fd5222
https://doi.org/10.1016/b978-0-32-390089-8.00005-2
https://doi.org/10.1016/b978-0-32-390089-8.00005-2
Publikováno v:
Optical Materials. 136:113418
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20fa965963567e89b858bcf10d7df89a
https://doi.org/10.1016/j.optmat.2022.113418
https://doi.org/10.1016/j.optmat.2022.113418
Publikováno v:
IEEE Transactions on Electron Devices. 66:4976-4981
In this article, we present that a bandgap can be generated in silicene nanoribbons (SiNRs) by codecorating them with lithium and chlorine atoms on two sides. Besides, using the semiempirical calculations, the performance of the functionalized SiNR a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68bfea285ecfe4f3b2f58d17408ebcad
https://doi.org/10.1109/ted.2019.2942396
https://doi.org/10.1109/ted.2019.2942396