Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Mu-Tung Chang"'
Publikováno v:
New Journal of Physics, Vol 22, Iss 3, p 033029 (2020)
Electron energy-loss spectroscopy is a well-established technique for characterizing low-Z elements in materials. Typically, a measured spectrum image is contributed from several materials when the composition of the specimen is sophisticated. Theref
Externí odkaz:
https://doaj.org/article/089d55227a814fc2b447d9a8975812a0
Autor:
Hsien-Wen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Yu-Jie Hong, Tien-Yu Chu, Mu-Tung Chang, Chia-Hung Hsu, Jueinai Kwo, Minghwei Hong
Publikováno v:
ACS Applied Electronic Materials. 4:2641-2647
Publikováno v:
Microscopy and Microanalysis. 27:1530-1533
Autor:
Chih Yang Huang, Jeng Kuei Chang, Chun Wei Huang, Ju Li, Thi Xuyen Nguyen, Wen-Wei Wu, Jagabandhu Patra, Min Ci Wu, Jyh Ming Ting, Oliver Clemens, Mu Tung Chang
Publikováno v:
Chemical Engineering Journal. 420:129838
Transition-metal high-entropy oxides (HEOs) are promising electrode materials for lithium-ion batteries (LIBs) due to their superior electrochemical properties and excellent long-term cycling stability. The performance of HEOs for LIBs is highly corr
Autor:
Mu-Tung Chang, Wei-Li Lee, Chun-Yueh Lin, Chia-Tso Hsieh, Wei-Hao Hsu, C. W. Wang, Wei-Tse Chang, Ing-Shouh Hwang
Publikováno v:
Applied Surface Science. 423:266-274
In this work, we present our study of suspended graphene with low-energy electrons based on a point projection microscopic/diffractive imaging technique. Both exfoliated and chemical vapor deposition (CVD) graphene samples were studied in an ultra-hi
Autor:
Yu-Chuan Shih, Ling Lee, Zhiming Wang, Yu-Lun Chueh, Yu-Ze Chen, Arumugam Manikandan, Mu-Tung Chang, Kai-De Liang, Wen-Wu Liu
Publikováno v:
Advanced Electronic Materials. 7:2170015
Autor:
Wen Wu Liu, Zhiming Wang, Yu Chuan Shih, Kai De Liang, Arumugam Manikandan, Ling Lee, Mu Tung Chang, Yu-Lun Chueh, Yu Ze Chen
Publikováno v:
Advanced Electronic Materials. 7:2000252
Publikováno v:
Journal of Nanomaterials. 2014:1-8
One-dimensional polycrystallineTa2O5nanostructures are synthesized by the annealing of theSiO2nanowires at 950°C in a reductive Ta vapor ambiance. The formation mechanism ofTa2O5nanostructures is discussed and illustrated in detail. The nucleation a
Autor:
Tomas Palacios, Wenjing Fang, Xi Ling, Yi-Hsien Lee, Jing-Kai Huang, Chia-Seng Chang, Han Wang, Lili Yu, Yumeng Shi, Jing Kong, Lain-Jong Li, Mu Tung Chang, Cheng-Te Lin, Mildred S. Dresselhaus
Publikováno v:
Nano Letters. 13:1852-1857
Recently, monolayers of layered transition metal dichalcogenides (LTMD), such as MX2 (M = Mo, W and X = S, Se), have been reported to exhibit significant spin-valley coupling and optoelectronic performances because of the unique structural symmetry a
Autor:
Mu-Tung Chang, Kai-Di Chang, Lain-Jong Li, Jacob Tse-Wei Wang, Ya-Chu Yu, Wenjing Zhang, Yi-Hsien Lee, Cheng-Te Lin, Chia-Seng Chang, Xin-Quan Zhang, Tsung-Wu Lin
Publikováno v:
Advanced Materials. 24:2320-2325
Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 m