Zobrazeno 1 - 10
of 259
pro vyhledávání: '"Mu-Chun Wang"'
Autor:
Guo-An Shen, Yan-Zhao Li, Gang Ren, Mu-Chun Wang, Jing-Bin Zhou, Yi Man, Wei-Peng Lu, Pi-Tong Sun, Xu-Xin Zhang
Publikováno v:
Radiology Case Reports, Vol 19, Iss 2, Pp 825-830 (2024)
This study presents a rare case of an older woman with an intracranial mesenchymal tumor in the right frontal and parietal lobes. Despite prompt surgical intervention, her condition rapidly deteriorated because of tumor dissemination, leading to her
Externí odkaz:
https://doaj.org/article/5f1015848e254c07bbba819f63e0f069
Publikováno v:
Crystals, Vol 13, Iss 11, p 1530 (2023)
This study focuses on enhancing the tunable sensitivity of a photo irradiance sensor (PIS) operating in the near-ultraviolet to visible to near-infrared (NUV-VIS-NIR) spectrum using an indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon o
Externí odkaz:
https://doaj.org/article/32007ef7e56a4fa08a132c79a78bfe39
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1861 (2022)
The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant
Externí odkaz:
https://doaj.org/article/b63142faad8841b1a7723847310f405b
Publikováno v:
Crystals, Vol 12, Iss 8, p 1079 (2022)
In this paper, we propose a dual-fiberoptic Fabry–Perot interferometer (FFPI) sensing system integrated with a low-cost and low-coherence light-emitting diode (LED) as a light source to detect dynamic vibration caused by acoustic waves with a cut-o
Externí odkaz:
https://doaj.org/article/5a494c6bc3e84ec689fe93e40fe7c412
Publikováno v:
Crystals, Vol 12, Iss 2, p 295 (2022)
A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (VDS) and gate voltage (VGS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, a
Externí odkaz:
https://doaj.org/article/ffb2c2de16914b79970f2080991eb4ff
Publikováno v:
Crystals, Vol 11, Iss 3, p 262 (2021)
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate vo
Externí odkaz:
https://doaj.org/article/2bd4f281cefd4065a59b67135d146ffa
Autor:
Chun-An Chen, Yu-Ting Hsu, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Mu-Chun Wang, Chien-Jung Huang
Publikováno v:
Crystals, Vol 10, Iss 1, p 34 (2020)
Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indiu
Externí odkaz:
https://doaj.org/article/85d0514c1a5c47d4be05ebf58c7ad2ba
Autor:
Yu-Ting Hsu, Che-Chi Lee, Wen-How Lan, Kai-Feng Huang, Kuo-Jen Chang, Jia-Ching Lin, Shao-Yi Lee, Wen-Jen Lin, Mu-Chun Wang, Chien-Jung Huang
Publikováno v:
Crystals, Vol 8, Iss 12, p 454 (2018)
Erbium-doped magnesium zinc oxides were prepared through spray pyrolysis deposition at 450 °C with an aqueous solution containing magnesium nitrate, zinc acetate, erbium acetate, and indium nitrate precursors. Diodes with different erbium-doped magn
Externí odkaz:
https://doaj.org/article/d5e6270b2a714c6c8d67f11a283c479e
Autor:
Shea-Jue Wang, Mu-Chun Wang, Shih-Fan Chen, Yu-Hsiang Li, Tien-Szu Shen, Hui-Yun Bor, Chao-Nan Wei
Publikováno v:
Sensors, Vol 18, Iss 9, p 2803 (2018)
In this work, three layers of transparent conductive films of WO3/Ag/WO3 (WAW) were deposited on a glass substrate by radio frequency (RF) magnetron sputtering. The thicknesses of WO3 (around 50~60 nm) and Ag (10~20 nm) films were mainly the changeab
Externí odkaz:
https://doaj.org/article/77588fa190354fe0886f6e3aa40c31d1
Publikováno v:
The Scientific World Journal, Vol 2015 (2015)
Externí odkaz:
https://doaj.org/article/e92e968c0f2a467db044371fe6e78145