Výsledky vyhledávání

Effects of 6H-SiC substrate polarity on the morphology and microstructure of AlN films by HVPE with varied V/III ratio

Autor: Ke Xu, Jing Jing Chen, Mu Tong Niu, Xu Jun Su, Jun Huang

Publikováno v: Journal of Crystal Growth. 507:196-199

AlN films grown by high temperature hydride vapor phase epitaxy (HVPE) on Si-face and C-face 6H-SiC substrates were investigated. The influences of the substrate polarity with varied V/III ratio on growth mode, structural characteristics and crystall

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1f365c4a8c02aac84919e5f86be3315
https://doi.org/10.1016/j.jcrysgro.2018.11.018

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Investigation of hydride vapor phase epitaxial growth of AlN on sputtered AlN buffer layers

Autor: MaoSong Sun, Ke Xu, Mu-Tong Niu, Xujun Su, Jun Huang

Publikováno v: CrystEngComm. 21:2431-2437

The influence of sputtered AlN buffer annealing conditions on the crystal quality of AlN thick films, fabricated by hydride vapor phase epitaxy, has been investigated. Compared with the AlN thick film grown on a sputtered AlN buffer layer without ann

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a7f3e06bd8dc6e4cfa4f051fef517329
https://doi.org/10.1039/c8ce02192a

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Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE

Autor: Di Di Li, Xu Jun Su, Jing Jing Chen, Lu Hua Wang, Jun Huang, Mu Tong Niu, Xiaodan Wang, Xionghui Zeng, Ke Xu

Publikováno v: Journal of Crystal Growth. 592:126731

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5d929d0c5abf37b5d15e613942c9be77
https://doi.org/10.1016/j.jcrysgro.2022.126731

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Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

Autor: Wei Wang, Ji Cai Zhang, Jian Feng wang, Ke Xu, Jun Huang, Mu Tong Niu

Publikováno v: Journal of Crystal Growth. 459:159-162

Crystalline qualities of three AlN films grown by cold-wall high temperature hydride vapor phase epitaxy (CW-HT-HVPE) on c-plane sapphire substrates, with different AlN buffer layers (BLs) deposited either by CW-HT-HVPE or by hot-wall low temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13584ac19674423cfcc2eee50937bea4
https://doi.org/10.1016/j.jcrysgro.2016.11.086

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Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE*

Autor: Di-Di Li, Jin-Tong Xu, Ke Xu, Jun Huang, Xujun Su, Jing Jing Chen, Mu-Tong Niu

Publikováno v: Chinese Physics B. 30:036801

AlN films grown on sputter-deposited and annealed AlN buffer layer by high temperature hydride vapor phase epitaxy (HVPE) have been fabricated and structurally characterized. The crystalline quality and surface morphology of as-grown AlN films with v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25c58767f5f631281a04d8f8034133e8
https://doi.org/10.1088/1674-1056/abd392

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Effect of flux rate on AlN epilayers grown by hydride vapor phase epitaxy

Autor: Ke Xu, Xu Jun Su, Jing Jing Chen, Jun Huang, Mu Tong Niu

Publikováno v: Journal of Crystal Growth. 555:125960

The surface morphology and crystalline quality of AlN epilayers grown by high-temperature hydride vapor phase epitaxy (HVPE) with various growth rate were investigated by AFM, XRD and cross-sectional TEM analyses. The growth rate of AlN films were co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bda48a34e7b10d96f8bde7cf448bd29d
https://doi.org/10.1016/j.jcrysgro.2020.125960

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Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy*

Autor: Xujun Su, Jun Huang, Jing Jing Chen, Ke Xu, Mu-Tong Niu

Publikováno v: Chinese Physics B. 29:076802

A comparison of the nitrogen sources (N2 and NH3) influence on AlN films grown by high-temperature halide vapor phase epitaxy (HVPE) is reported. The x-ray rocking curves (XRCs) indicate that the full width at half maximum (FWHM) of (0002) plane for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6790e692acb9a7de5f6c5277bc1e16fa
https://doi.org/10.1088/1674-1056/ab90ed

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Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source

Autor: Mu Tong Niu, Qi Jia Chen, Jun Huang, Ke Xu

Publikováno v: Journal of Crystal Growth. 536:125567

Epitaxial growth of AlN films on sapphire substrates prepared by halide vapor phase epitaxy (HVPE) using N2 as N source is reported. The effects of V/III ratio on the growth rate, surface morphology and crystal quality of AlN films are systematically

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c607398d564bb2b00cc0b67fd3b840b
https://doi.org/10.1016/j.jcrysgro.2020.125567

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Solution-grown 3D Cu2O networks for efficient solar water splitting

Autor: Deli Wang, Alireza Kargar, Mu Tong Niu, Soheil Seena Partokia, Muchuan Yang, Ke Sun, Salomón May, Kun Xu, Paniz Allameh, Justin S. Cheung

Publikováno v: Nanotechnology. 25(20)

We report a facile and large-scale solution fabrication of cuprous oxide (Cu2O) nanowires/nanorods and 3D porous Cu2O networks and their application as photocathodes for efficient solar water splitting. The growth mechanism and structural characteriz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e54c0aa715d45b3f22a6384a0b7fce0
https://pubmed.ncbi.nlm.nih.gov/24784802

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