Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Mu Hsuan Chan"'
Autor:
Jay Li, Wei Jhen Chen, Joe Lin, Mu Hsuan Chan, Tank Lo, Bruce Xu, Liang Yih Hung, Nicholas Kao, Don Son Jiang, Yu-Po Wang
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Jay Lia, Fang-Lin Tsai, Jackson Li, George Pan, Mu-Hsuan Chan, Louise Zheng, Steven Chen, Nicholas Kao, David Lai, Katch Wan, Yu-Po Wang
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Autor:
Mu Hsuan Chan, Don Son Jiang, Wei Jhen Chen, C. M. Huang, Chris Chuang, C. Key Chung, Yu Lung Huang
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Moore's law has been slowed down in transistor scaling, but the demands of high computing processing does not cool down and the data rate transmission is growing exponentially in each day. The surge in high data rate causes present DDR4 memories succ
Publikováno v:
International Symposium on Microelectronics. 2016:000524-000528
Fan-out wafer-level-packaging (FO-WLP) technology has been widely investigated recently with its advantages of thin form factor structure, cost effectiveness and high performance for wide range applications. Reducing wafer warpage is one of the most
Autor:
Fu-Hsing Lu, Mu-Hsuan Chan
Publikováno v:
Surface and Coatings Technology. 210:135-141
Air was employed as a reactive gas in the air/Ar gaseous mixture for sputtering to produce TiN, TiN x O y , and N-doped TiO x thin films. Air-based deposition conducted in a low-vacuum base pressure environment can reduce substantially the overall pr
Publikováno v:
Thin Solid Films. 518:7300-7303
Zirconium oxynitride (ZrN x O y ) thin films were prepared by d.c. magnetron sputtering using air as a reactive gas. Replacing conventionally used N 2 /O 2 with air as a reactive gas allows the process to perform at high base pressures (low vacuum),
Autor:
Mu-Hsuan Chan, Fu-Hsing Lu
Publikováno v:
Thin Solid Films. 518:1369-1372
Nitrogen-doped titanium dioxide (TiO2 − xNx) thin films desirable for visible light photocatalysts were prepared by reactive sputtering using air/Ar mixtures. Using air as the reactive gas allows the process to conduct at high base pressures (low v
Autor:
Mu-Hsuan Chan, Fu-Hsing Lu
Publikováno v:
Thin Solid Films. 517:5006-5009
X-ray photoelectron spectroscopy (XPS) has been employed to investigate titanium oxynitride (TiN x O y ) films prepared by d.c. magnetron sputtering using air/Ar mixtures, which allows one to perform the deposition at a high base pressure (1.3 × 10
Publikováno v:
Journal of Materials Research. 24:2400-2408
In this work, Ti pellets were selected as a model system to investigate the influences of oxygen impurity in nitrogen gas on the reaction of a metal with the nitrogen. Analyzing changes in the in situ oxygen partial pressures when titanium specimens
Autor:
Mu-Hsuan Chan, Fu-Hsing Lu
Publikováno v:
Surface and Coatings Technology. 203:614-618
In the literature titanium oxynitride (TiN x O y ) films have often been prepared by controlling N 2 /O 2 /Ar mixing gases in physical vapor deposition. In this study, TiN x O y films were prepared by d.c. magnetron sputtering using air/Ar mixtures.