Zobrazeno 1 - 10
of 1 483
pro vyhledávání: '"Mt Pleasant"'
Autor:
Allison Au-Yeung, Daksha Marfatia, Kamryn Beers, Daogyehneh Amanda General, Kahontiyoha Cynthia Denise McQueen, Dawn Martin-Hill, Christine Wekerle, Tehota'kerá:ton Jeremy Green, The Six Nations Youth Mental Wellness Committee, Tristan Bomberry, Lori Davis Hill, Tehota'kerá:tonh Jeremy Green, Chase Harris, Beverly Jacobs, Norma Jacobs, Makasa Looking Horse, Cynthia Denise McQueen, Tehahenteh Frank Miller, Jennifer Mt. Pleasant
Publikováno v:
Frontiers in Psychiatry, Vol 14 (2023)
ObjectiveThe purpose of the current study was to explore the acceptability and feasibility of a resilience-focused mobile application, JoyPop™, for use with Indigenous youth.MethodsA Haudenosaunee community-based research advisory committee co-deve
Externí odkaz:
https://doaj.org/article/a4bc2b03ca9e4546b478add027efadf0
Autor:
Alyssa Mt. Pleasant
Publikováno v:
The American Historical Review. 125:533-536
David Silverman offers a critical appraisal of two prizewinning works in Native American and Indigenous studies (NAIS), Our Beloved Kin: A New History of King Philip’s War, by Lisa Brooks, and Memory Lands: King Philip’s War and the Place of Viol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5ac6893d203f82eeb2b9786c7d7017
https://doi.org/10.1093/ahr/rhaa195
https://doi.org/10.1093/ahr/rhaa195
Autor:
Long, Sebastian O, Powell, Anthony, Hull, Stephen, Orlandi, Fabio, Tang, Chiu C, Supka, Andrew R, Fornari, Marco, Vaqueiro, Paz, Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6AD, England, United Kingdom, STFC, Rutherford Appleton Laboratory, ISIS Facility, Didcot OX11 0QX, United Kingdom, Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom, Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, Michigan 48859, United States
Tetrahedrite, Cu12Sb4S13, is an abundant mineral with excellent thermoelectric properties owing to its low thermal conductivity. The electronic and structural origin of the intriguing physical properties of tetrahedrite, including its metal-to-semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::701fb12f9e6d935e5327efb183ab3989
Publikováno v:
Early American Literature. 53:407-444
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac356d0494050b4fd32f1ad22640fc0c
https://doi.org/10.1353/eal.2018.0044
https://doi.org/10.1353/eal.2018.0044
Autor:
Alyssa Mt. Pleasant
Publikováno v:
English Language Notes. 54:175-181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adcba22e3ce8d27ce5f4997102c5c20d
https://doi.org/10.1215/00138282-54.2.175
https://doi.org/10.1215/00138282-54.2.175
Autor:
P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman
Publikováno v:
IEEE Transactions on Electron Devices. 63:3076-3083
We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94402cce99893677da7600801d3a1c6e
https://doi.org/10.1109/ted.2016.2579160
https://doi.org/10.1109/ted.2016.2579160
Autor:
Alyssa Mt. Pleasant
Publikováno v:
Biography. 39:370-372
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c0877e277e508f1fbad75a14064e8c3
https://doi.org/10.1353/bio.2016.0046
https://doi.org/10.1353/bio.2016.0046
Autor:
K.H.G. Duh, Kenneth K. Chu, J. Diaz, M. Ashman, P.M. Smith, Peide D. Ye, Carlton T. Creamer, Lin Dong, L. Mt. Pleasant, James J. Komiak, K. Nichols, P.C. Chao, Dong Xu
Publikováno v:
IEEE Electron Device Letters. 36:442-444
High-performance 0.1- $\mu \text{m}$ InAlN/GaN high electron-mobility transistors (HEMTs) have been successfully developed for power amplifiers operating at E-band (targeting 71–76 and 81–86-GHz bands). High maximum drain current of 1.75 A/mm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71451ba83d6bd7bd5725474f206289d0
https://doi.org/10.1109/led.2015.2409264
https://doi.org/10.1109/led.2015.2409264
Autor:
Dong Xu, Xiaoping Yang, K.H.G. Duh, L. Schlesinger, R. Isaak, R. A. Carnevale, P.M. Smith, P.C. Chao, P. Seekell, Lee Mohnkern, L. Mt. Pleasant, Alice Vera, R. G. Stedman, Kanin Chu
Publikováno v:
IEEE Transactions on Electron Devices. 59:128-138
Whereas gate-length reduction has served as the major driving force to enhance the performance of GaAs- and InP-based high-electron mobility transistors (HEMTs) over the past three decades, the limitation of this approach begins to emerge. In this pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e15afbb40d81766bcf6d61ec7f4150
https://doi.org/10.1109/ted.2011.2172614
https://doi.org/10.1109/ted.2011.2172614
Autor:
P.M. Smith, P. Seekell, L. Mt. Pleasant, P.C. Chao, H. Karimy, Xiaoping Yang, R. Isaak, G. Cueva, R. A. Carnevale, L. Schlesinger, R. G. Stedman, Kanin Chu, Dong Xu, K.H.G. Duh, Alice Vera, W. Kong, B. Golja, Lee Mohnkern
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:393-398
We report the design, fabrication and characterization of metamorphic high electron-mobility transistors (MHEMTs) with self-aligned ohmic electrodes. In this work, asymmetrically recessed 50-nm Γ-gates have been successfully used as the shadow mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e535e01a4f98357681968d6391ebb84
https://doi.org/10.1142/s0129156411006672
https://doi.org/10.1142/s0129156411006672