Výsledky vyhledávání - "Mrykhin I. A."

Akademický článek

Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

Autor: Vakiv N. M., Krukovskii S. I., Sukach A. V., Tetyorkin V. V., Mrykhin I. A., Mikhashchuk Yu. S., Krukovskii R. S.

Publikováno v: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 27-30 (2012)

The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing a

Externí odkaz: https://doaj.org/article/5f481beab823400686992112cc0ff7fe

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Control of carrier concentration in epitaxial layers AlGaAs for laser structures growing by low temperature liquid phase epitaxy method

Autor: Zayachuk, D. M., Krukovsky, S. I., Mrykhin, I. O.

Наведено результати досліджень впливу домішки магнію на концентрацію носіїв заряду в епітаксійних шарах Al0.1Ga0.9As і Al0.28Ga0.72As, вирощених ме

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1859::ae90f1db15952fa0fa31b87f6cb0fb85
https://ena.lpnu.ua/handle/ntb/47519

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