Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Mrinmoy Dutta"'
Autor:
Mrinmoy Dutta, Dr. Atanu Kr. Dutta
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 11:1496-1501
System Identification is an emerging area in the domain of structural engineering specially under structural health monitoring. For dynamic analysis or stimulation, the dynamic system parameters (i.e. natural frequency, mode shape, damping ratio etc.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41d645e05031002ca14fa3456b191d3
https://doi.org/10.22214/ijraset.2023.49301
https://doi.org/10.22214/ijraset.2023.49301
Publikováno v:
Langmuir. 35:3897-3906
Controlled resistive switching by using an optimized 2 nm thick MoS2 interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaOx-based resistive random access memory (RRAM) platform have been investigated for the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1ce40e78a370963a1480f665ea8d9c
https://doi.org/10.1021/acs.langmuir.8b04090
https://doi.org/10.1021/acs.langmuir.8b04090
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Effects of Mo/Ti barrier layer on improving resistive switching and neuromorphic characteristics have been evaluated on MoS 2 based CBRAM devices for the first time. The Al/Cu/Ti/MoS 2 /TiN device shows long program/erase endurance of $\gt 1.5 \times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e927d365a57308d7ef05222d2e4b32f
https://doi.org/10.1109/vlsi-tsa48913.2020.9203758
https://doi.org/10.1109/vlsi-tsa48913.2020.9203758
Publikováno v:
Electronics, Vol 9, Iss 1106, p 1106 (2020)
Electronics
Volume 9
Issue 7
Electronics
Volume 9
Issue 7
Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75e61d4973cf9b5fa004873ef77aabfe
https://www.mdpi.com/2079-9292/9/7/1106
https://www.mdpi.com/2079-9292/9/7/1106
Autor:
Sourav Roy, Debanjan Jana, Ya Ling Chang, Anisha Roy, Hsin Ming Cheng, Rajeswar Panja, Rajat Mahapatra, Mrinmoy Dutta, Jian Tai Qiu, Jer-Ren Yang, Somsubhra Chakrabarti, Subhranu Samanta, Siddheswar Maikap, Ling Na Tsai, Sreekanth Ginnaram
Publikováno v:
Applied Surface Science. 433:51-59
Understanding of resistive switching mechanism through H2O2 sensing and improvement of switching characteristics by using TaOx-based material in W/Al2O3/TaOx/TiN structure have been reported for the first time. Existence of amorphous Al2O3/TaOx layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c59f21166868dbc81ffaecb01f3d61
https://doi.org/10.1016/j.apsusc.2017.10.072
https://doi.org/10.1016/j.apsusc.2017.10.072
Autor:
Hsin Ming Cheng, Rajeswar Panja, Surajit Jana, Siddheswar Maikap, Sourav Roy, Subhranu Samanta, Mrinmoy Dutta, Sreekanth Ginnaram, Ling Na Tsai, S. Z. Rahaman, Anisha Roy, Somsubhra Chakrabarti, Samit K. Ray, Amit Prakash, Jian Tai Qiu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Scientific Reports
Scientific Reports
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f539c9ce1d13f8d2d6e887e3d78fb7ad
http://link.springer.com/article/10.1038/s41598-017-11657-4
http://link.springer.com/article/10.1038/s41598-017-11657-4
Autor:
Sreekanth Ginnaram, Siddheswar Maikap, Hsien-Chin Chiu, Jer-Ren Yang, Ya Ling Chang, Surajit Jana, Hsin Ming Cheng, Somsubhra Chakrabarti, Rajat Mahapatra, Kanishk Singh, Mrinmoy Dutta, Pankaj Kumar, Subhranu Samanta, Anisha Roy, Jian Tai Qiu, Debanjan Jana
Publikováno v:
Journal of The Electrochemical Society. 164:B127-B135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e634969cfc5aceec29bbcc223e4d99
https://doi.org/10.1149/2.1011704jes
https://doi.org/10.1149/2.1011704jes
Autor:
Mrinmoy Dutta, K H Singh
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1020:012024
In this paper we have introduced the notion of weak reduced module and weak rigid module as the generalizations of reduced module by working on the context of nilpotent elements of module and investigated some of its properties. Various results are e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b249f5384babdc703aabc93098e4ae9
https://doi.org/10.1088/1757-899x/1020/1/012024
https://doi.org/10.1088/1757-899x/1020/1/012024
Publikováno v:
Vacuum. 176:109326
The Ti/MoS2 based 9 × 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3676b58e974270240a44558ad3e28630
https://doi.org/10.1016/j.vacuum.2020.109326
https://doi.org/10.1016/j.vacuum.2020.109326