Zobrazeno 1 - 10
of 165
pro vyhledávání: '"Mozharov Alexey"'
Autor:
Mastalieva Viktoriia, Neplokh Vladimir, Aybush Arseniy, Stovpiaga Ekaterina, Eurov Daniil, Vinnichenko Maksim, Karaulov Danila, Kirillenko Demid, Mozharov Alexey, Sharov Vladislav, Kolchanov Denis, Machnev Andrey, Golubev Valery, Smirnov Alexander, Ginzburg Pavel, Makarov Sergey, Kurdyukov Dmitry, Mukhin Ivan
Publikováno v:
Nanophotonics, Vol 13, Iss 18, Pp 3299-3309 (2024)
Efficient second harmonic generation and broad-band photoluminescence from deeply subwavelength and nontoxic nanoparticles is essential for nanophotonic applications. Here, we explore nonlinear optical response from mesoporous Si/SiO2, SiO2, and Si n
Externí odkaz:
https://doaj.org/article/a9d3abf1d50c49b49e6434773cb0cbd3
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
In this study, a numerical simulation of the tunnel effect in the n-GaN/p-Si heterostructure has been performed. Variations of band diagrams, current-voltage characteristics and cutoff frequencies of the diode heterostructures under study were obtain
Externí odkaz:
https://doaj.org/article/aedab3fbf71c4bc59e13fff314ca2d54
Autor:
Dvoretckaia Liliia, Mozharov Alexey, Komarov Sergey, Vyacheslavova Ekaterina, Moiseev Eduard, Fedorov Vladimir, Mukhin Ivan
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 3 (2024)
This article presents the technology for the formation of optical microcavities based on the GaP(NAs) semiconductor material system on silicon. For the first time, a plasma etching mode which ensures the achievement of an aspect ratio of 5:1 and low
Externí odkaz:
https://doaj.org/article/d9c0881f290a4f6b9b2f4a4f49ff0a74
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 17, Iss 1 (2024)
The paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is po
Externí odkaz:
https://doaj.org/article/6bf34970191b41b08c5fcfa9d66f5db9
Autor:
Sharov, Vladislav, Novikova, Kristina, Mozharov, Alexey, Fedorov, Vladimir, Alekseev, Prokhor, Mukhin, Ivan
Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and electrical properties of MBE-grown p- and n-type gallium phosphide nanow
Externí odkaz:
http://arxiv.org/abs/2401.17215
Autor:
Mitin, Dmitry M., Pavlov, Alexander, Fedorov, Fedor S., Vorobyev, Alexander, Mozharov, Alexey, Fedorov, Vladimir V., Mukhin, Mikhail, Cirlin, George E., Nasibulin, Albert G., Mukhin, Ivan
Publikováno v:
In Sensors and Actuators: B. Chemical 15 October 2024 417
Autor:
Dvoretckaia, Liliia N., Fedorov, Vladimir V., Pavlov, Alexander, Komarov, Sergey D., Moiseev, Eduard I., Miniv, Dmitry V., Kaveev, Andrey K., Smirnov, Aliaksandr G., Kirilenko, Demid A., Mozharov, Alexey M., Mukhin, Ivan S.
Publikováno v:
In Materials Research Bulletin February 2025 182
Autor:
Sharov, Vladislav, Novikova, Kristina, Mozharov, Alexey, Fedorov, Vladimir, Kirilenko, Demid, Alekseev, Prokhor, Mukhin, Ivan
Publikováno v:
In Scripta Materialia 15 July 2024 248
Autor:
Pavlov, Alexander, Mozharov, Alexey, Berdnikov, Yury, Barbier, Camille, Harmand, Jean-Christophe, Tchernycheva, Maria, Polozkov, Roman, Mukhin, Ivan
We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate
Externí odkaz:
http://arxiv.org/abs/2107.10231
Autor:
Fedorov, Vladimir V., Dvoretckaia, Liliia N., Mozharov, Alexey M., Fedina, Sergey V., Kirilenko, Demid A., Berezovskaya, Tamara N., Faleev, Nikolai N., Yunin, Pavel A., Drozdov, Mikhail N., Mukhin, Ivan S.
Publikováno v:
In Materials Science in Semiconductor Processing December 2023 168