Evidence of Formation of Superdense Nonmagnetic Cobalt.

Autor: Banu N; Department of Materials Science, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India., Singh S; Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India., Satpati B; Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India., Roy A; Microelectronic Research Center, The University of Texas at Austin, 10100 Burnet Road, Bldg 160, MER 1.606J, Austin, Texas 78758, USA., Basu S; Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India., Chakraborty P; Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India., Movva HC; Microelectronic Research Center, The University of Texas at Austin, 10100 Burnet Road, Bldg 160, MER 1.606J, Austin, Texas 78758, USA., Lauter V; Quantum Condensed Matter Division, Neutron Science Directorate, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, TN 37831-6475, USA., Dev BN; Department of Materials Science, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India.

Publikováno v: Scientific reports [Sci Rep] 2017 Feb 03; Vol. 7, pp. 41856. Date of Electronic Publication: 2017 Feb 03.

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors.

Autor: Kang S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Prasad N; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Movva HC; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Rai A; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Kim K; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Mou X; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Taniguchi T; National Institute for Material Science , 1-1Namiki, Tsukuba, Ibaraki 305-0044, Japan., Watanabe K; National Institute for Material Science , 1-1Namiki, Tsukuba, Ibaraki 305-0044, Japan., Register LF; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Tutuc E; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Banerjee SK; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.

Publikováno v: Nano letters [Nano Lett] 2016 Aug 10; Vol. 16 (8), pp. 4975-81. Date of Electronic Publication: 2016 Jul 20.

van der Waals Heterostructures with High Accuracy Rotational Alignment.

Autor: Kim K; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Yankowitz M; Physics Department, University of Arizona , Tucson, Arizona 85721, United States., Fallahazad B; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Kang S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Movva HC; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Huang S; Physics Department, University of Arizona , Tucson, Arizona 85721, United States., Larentis S; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Corbet CM; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., Taniguchi T; National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan., Watanabe K; National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan., Banerjee SK; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States., LeRoy BJ; Physics Department, University of Arizona , Tucson, Arizona 85721, United States., Tutuc E; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.

Publikováno v: Nano letters [Nano Lett] 2016 Mar 09; Vol. 16 (3), pp. 1989-95. Date of Electronic Publication: 2016 Feb 15.

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Autor: Movva HC; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States., Rai A; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States., Kang S; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States., Kim K; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States., Fallahazad B; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States., Taniguchi T; National Institute of Materials Science , 1-1 Namiki, Tsukuba, 305-044, Japan., Watanabe K; National Institute of Materials Science , 1-1 Namiki, Tsukuba, 305-044, Japan., Tutuc E; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States., Banerjee SK; Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.

Publikováno v: ACS nano [ACS Nano] 2015 Oct 27; Vol. 9 (10), pp. 10402-10. Date of Electronic Publication: 2015 Sep 14.

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

Autor: Rai A; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Valsaraj A; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Movva HC; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Roy A; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Ghosh R; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Sonde S; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Kang S; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Chang J; ‡SEMATECH, 257 Fuller Rd #2200, Albany, New York-12203, United States., Trivedi T; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Dey R; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Guchhait S; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Larentis S; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Register LF; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Tutuc E; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States., Banerjee SK; †Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States.

Publikováno v: Nano letters [Nano Lett] 2015 Jul 08; Vol. 15 (7), pp. 4329-36. Date of Electronic Publication: 2015 Jun 26.