Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Movva, Hema C. P."'
Autor:
Wu, Di, Li, Wei, Rai, Amritesh, Wu, Xiaoyu, Movva, Hema C. P., Yogeesh, Maruthi N., Chu, Zhaodong, Banerjee, Sanjay K., Akinwande, Deji, Lai, Keji
Publikováno v:
Nano Letters, 2019
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel prop
Externí odkaz:
http://arxiv.org/abs/1902.08147
Autor:
Kim, Kyounghwan, Prasad, Nitin, Movva, Hema C. P., Burg, G. William, Wang, Yimeng, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F., Tutuc, Emanuel
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally
Externí odkaz:
http://arxiv.org/abs/1809.02639
Autor:
Larentis, Stefano, Movva, Hema C. P., Fallahazad, Babak, Kim, Kyoughwan, Behroozi, Armad, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel
Publikováno v:
Phys. Rev. B 97, 201407(R) (2018)
We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the
Externí odkaz:
http://arxiv.org/abs/1804.10104
Autor:
Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., Tutuc, Emanuel
Publikováno v:
Phys. Rev. Lett. 120, 107703 (2018)
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $\Gamma$ val
Externí odkaz:
http://arxiv.org/abs/1801.03474
Autor:
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C P, Meng, Xianghai, He, Feng, Banerjee, Sanjay, Wang, Yaguo
Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy
Externí odkaz:
http://arxiv.org/abs/1801.02220
Autor:
Trivedi, Tanuj, Roy, Anupam, Movva, Hema C. P., Walker, Emily S., Bank, Seth R., Neikirk, Dean P., Banerjee, Sanjay K.
Publikováno v:
ACS Nano 11 (7), pp 7457-7467 (2017)
As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compo
Externí odkaz:
http://arxiv.org/abs/1707.04920
Autor:
Roy, Anupam, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Kim, Kyounghwan, Movva, Hema C. P., Dey, Rik, Pramanik, Tanmoy, Chowdhury, Sayema, Tutuc, Emanuel, Banerjee, Sanjay K.
Publikováno v:
Appl. Phys. Lett. 110, 201905 (2017)
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged in
Externí odkaz:
http://arxiv.org/abs/1705.03051
Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam deposition c
Externí odkaz:
http://arxiv.org/abs/1703.04270
Autor:
Movva, Hema C. P., Fallahazad, Babak, Kim, Kyounghwan, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel
Publikováno v:
Phys. Rev. Lett. 118, 247701 (2017)
We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\tim
Externí odkaz:
http://arxiv.org/abs/1702.05166
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