Zobrazeno 1 - 10 of 60 pro vyhledávání: '"Moustafa Y. Ghannam"'
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Akademický článek
Modeling Surface Recombination at the p-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers
Autor: Moustafa Y. Ghannam, Husain A. Kamal
Publikováno v: Advances in Condensed Matter Physics, Vol 2014 (2014)
An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon via Pb amphoteric centers associated with surface dangling bonds. The proposed model is a surface adaptation of a
Externí odkaz: https://doaj.org/article/6224218d72f24e048a0fe473a09e4922
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3
Fundamental constraints imposed by energy barriers on the fill factor and on the efficiency of silicon heterojunction solar cells
Autor: Moustafa Y. Ghannam, Yaser Abdulraheem
Publikováno v: Solar Energy Materials and Solar Cells. 171:228-238
A model that relates the relatively low Fill Factor (FF) in p + /n amorphous/crystalline silicon (a-Si:H/c-Si) hetero-junction solar cells (SHJ) with perfectly ohmic contacts, to hole reflection at the hetero-interface under illumination is proposed.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::67576689a3861c85fd802ed75fd11d9c
https://doi.org/10.1016/j.solmat.2017.06.042
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4
A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%
Autor: Menglei Xu, M.D. Gius Uddin, Jozef Szlufcik, Jinyoun Cho, Ivan Gordon, Jef Poortmans, Hariharsudan Sivaramakrishnan Radhakrishnan, Moustafa Y. Ghannam
Publikováno v: Progress in Photovoltaics: Research and Applications
We present a novel process sequence to simplify the rear-side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a-Si:H (i/p(+)) hole contact and a-Si:H (i/n(+)) electron co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a83f162ec98769580601ed94031dd79e
http://hdl.handle.net/1942/29926
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5
Influence of the Recombination Parameters at the Si/SiO2Interface on the Ideality of the Dark Current of High Efficiency Silicon Solar Cells
Autor: Husain A. Kamal, Moustafa Y. Ghannam
Publikováno v: JSTS:Journal of Semiconductor Technology and Science. 15:232-242
Analytical study of surface recombination at the Si/SiO 2 interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d4cc167f355241d043a5dbea15d501b
https://doi.org/10.5573/jsts.2015.15.2.232
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6
Modeling Surface Recombination at the p-TypeSi/SiO2Interface via Dangling Bond Amphoteric Centers
Autor: Husain A. Kamal, Moustafa Y. Ghannam
Publikováno v: Advances in Condensed Matter Physics. 2014:1-9
An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon viaPbamphoteric centers associated with surface dangling bonds. The proposed model is a surface adaptation of a mo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93cbbfe86af6c08f48548029e53da8ea
https://doi.org/10.1155/2014/857907
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7
Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen
Autor: Yaser Abdul Raheem, Jef Poortmans, Moustafa Y. Ghannam, Abdul Azeez Alomar
Publikováno v: physica status solidi c. 9:2194-2197
The role of hydrogen in promoting thin film splitting from crystalline silicon wafers with pores or trenches during high temperature annealing is investigated. During the treatment, trenches are transformed into spherical voids that may laterally cha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3b90f9b0acbc93a512014b9eb44789c
https://doi.org/10.1002/pssc.201200181
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9
Shape and size dependence of the anti-reflective and light-trapping action of periodic grooves
Autor: Moustafa Y. Ghannam, A.A. Abouelsaood, Sahar A. El-Naggar
Publikováno v: Progress in Photovoltaics: Research and Applications. 10:513-526
The shape and size dependence of the anti-reflective and light-diffusing properties of surfaces with linear periodic grooves is studied. Grooves of triangular or rectangular cross-sections on the front or back surface of a crystalline silicon layer a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::854cf841b1981ca73fae1d48272cb3ed
https://doi.org/10.1002/pip.443
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10
Study of surface morphology and optical characterization of crystalline and multi-crystalline silicon surface textured in highly diluted alkaline solutions
Autor: Suji K. Zachariah, Ali Hajjiah, Moustafa Y. Ghannam
Publikováno v: Journal of Engineering Research. 2
In this work, alkaline texturing of (100) crystalline Si and multicrystalline Si wafers in diluted KOH solution leading to pyramidal structures is studied as a function of the etching temperature. The surface morphology is investigated using Atomic F
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42ded4fdab6dfcb35560ebb3aa48d881
https://doi.org/10.7603/s40632-014-0009-9
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