GeSnOI mid-infrared laser technology

Autor: Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi

Publikováno v: Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)

Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a num

Externí odkaz: https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a

GeSnOI mid-infrared laser technology

Autor: Jean-Michel Hartmann, Nicolas Pauc, Emilie Sakat, Frederic Boeuf, Jérémie Chrétien, Julien Chaste, Vincent Calvo, Alexei Chelnokov, Moustafa El Kurdi, Marvin Frauenrath, Vincent Reboud, Maksym Gromovyi, Andjelika Bjelajac, Binbin Wang, Gilles Patriarche, Etienne Herth, Philippe Boucaud

Publikováno v: Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Light: Science and Applications
Light: Science and Applications, Nature Publishing Group, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light, Science & Applications
Light: Science and Applications, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of li

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::987c14cb4dca91d25cf88177507785cc
https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a

Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Autor: Mathieu Bertrand, Philippe Boucaud, Isabelle Sagnes, Sébastien Sauvage, Vincent Reboud, Moustafa El Kurdi, Riazul Arefin, Konstantinos Pantzas, Jérémie Chrétien, Binbin Wang, Anas Elbaz, Gilles Patriarche, Alexei Chelnokov, Lara Casiez, Frederic Boeuf, Etienne Herth, Nicolas Pauc, Razvigor Ossikovski, Emilie Sakat, Antonino Foti, Jean-Michel Hartmann, Xavier Checoury, Vincent Calvo

Publikováno v: ACS Photonics
ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (10), pp.2713-2722. ⟨10.1021/acsphotonics.0c00708⟩

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e40945e7a302aec808850b209767507
https://doi.org/10.1021/acsphotonics.0c00708

Laser infrarouge à base de semi-conducteurs de la filière silicium

Autor: Moustafa El Kurdi, Philippe Boucaud, Vincent Reboud, Jean-Michel Hartmann, Nicolas Pauc, Emilie Sakat, Alexei Chelnokov, Vincent Calvo, F. Bœuf

Publikováno v: Photoniques
Photoniques, EDP Sciences, 2021, pp.40-43. ⟨10.1051/photon/202110940⟩
Photoniques, 2021, 109, pp.40-43. ⟨10.1051/photon/202110940⟩

International audience; Nous présentons les récents développements scientifiques et techniques liés aux sources lasers infrarouges en micro-cavités à base d’alliages germanium-étain (GeSn). Ces alliages sont des matériaux semi-conducteurs d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12b43ec36b326c46a17df8f34b0bf434
https://hal.archives-ouvertes.fr/hal-03322277/document

GeSnOI technology for enhanced Si-based laser designs and performances

Autor: Jérémie Chrétien, Gilles Patriarche, Vincent Calvo, Dan Buca, Detlev Grützmacher, Etienne Herth, Philippe Boucaud, Frederic Boeuf, Anas Elbaz, Moustafa El Kurdi, Binbin Wang, Vincent Reboud, Nicolas Pauc, Emilie Sakat, Jean-Michel Hartmann, Xavier Checoury, Nils von den Driesch, Konstantinos Pantzas, Alexei Chelnokov, Isabelle Sagnes

Publikováno v: Novel In-Plane Semiconductor Lasers XX.

Direct band gap achievements in germanium by alloying with tin or by tensile strain engineering has enabled, in recent years, several demonstrations of laser emission in the 2-5µm wavelength range. This fast and promising emergence of CMOS-compatibl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b99b5d72da137642f1f1d252f0cebc75
https://doi.org/10.1117/12.2587318