Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Mourits Nielsen"'
Publikováno v:
Surface Science. 486:L495-L501
At room temperature a monolayer coverage of Pb on Si(1 1 1) forms a hexagonal incommensurate structure which changes into a commensurate Si(1 1 1)- 3 2 −1 1 -Pb structure at temperatures below 230 K. A similar 3 2 −1 1 -reconstruction, but stable
Autor:
ttiger, Kasper Oktavio Schweitz, J. Bo, Mourits Nielsen, Robert Feidenhans'l, Jacques Chevallier, F. B. Rasmussen
Publikováno v:
Journal of Applied Physics. 88:1401-1406
The effect of intermixing on the apparent interface stress is studied in 〈111〉-textured dc-magnetron sputtered Au/Ni multilayers by use of two methods commonly used for determining interface stress. The method using profilometry and in-plane x-ra
Autor:
Christian Kumpf, Mourits Nielsen, Robert Feidenhans'l, Oliver Bunk, Martin Nielsen, Jan H. Zeysing, Robert L. Johnson
Publikováno v:
Surface Science. 448:L213-L219
A close-packed lead adsorbate layer on Si(111) forms an incommensurate hexagonal phase which exhibits a reversible phase transition to a commensurate Si(111)-( 3 2 −1 1 )-Pb structure upon cooling below 230 K. Surface X-ray diffraction measurements
The interface structure in directly bonded silicon crystals studied by synchrotron X-ray diffraction
Autor:
Mourad Benamara, Kurt Rasmussen, Mourits Nielsen, Robert Feidenhans'l, Paul B. Howes, Jan Vedde, Francois Grey
Publikováno v:
Surface Science. 442:L989-L994
Fusion-bonded silicon wafers exhibit a superstructure at their common interface due to the spatial beating of the two crystal lattices. The superstructure consists of a network of screw dislocations with a period determined by the twist angle θ . By
Publikováno v:
Physical Review B. 60:11078-11083
Autor:
Mourits Nielsen, A. S. Dakkouri, Robert Feidenhans'l, S. Maupai, G.A. Eckstein, J. H. Zeysing, Oliver Bunk, Robert L. Johnson, M. Stratmann, Martin Nielsen
Publikováno v:
Physical Review B. 60:8321-8325
Autor:
Mourits Nielsen, L. Lottermoser, Robert Feidenhans'l, Gerald Falkenberg, Jeff Baker, J. H. Zeysing, Robert L. Johnson, F. Berg-Rasmussen, Oliver Bunk
Publikováno v:
Physical Review B. 59:12228-12231
A detailed structural model for the indium-induced $\mathrm{Si}(111)\ensuremath{-}(4\ifmmode\times\else\texttimes\fi{}1)$ surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic $
Autor:
D. Grozea, E. Landree, Robert L. Johnson, Mourits Nielsen, Robert Feidenhans'l, Laurence D. Marks
Publikováno v:
Surface Science. 418:32-45
The atomic structure of the Au 6×6 on Si(111) phase has been determined using direct methods and surface X-ray diffraction data. This surface structure is very complicated, with 14 independent gold atoms, relaxations in 24 independent silicon sites
Autor:
E. Landemark, Detlef-M. Smilgies, T. van Gemmeren, L. Lottermoser, O. Bunk, Robert L. Johnson, Mourits Nielsen, Robert Feidenhans'l
Publikováno v:
Surface Review and Letters. :1043-1052
The surface geometry of the 1×1 and 1×2 phases of bismuth on GaSb(110) has been determined using surface X-ray diffraction with synchrotron radiation. The bismuth atoms form zigzag chains along the [Formula: see text] direction of the substrate. Fo
Autor:
T. van Gemmeren, Oliver Bunk, Robert L. Johnson, Mourits Nielsen, Robert Feidenhans'l, L. Lottermoser, Gerald Falkenberg
Publikováno v:
Surface Science. 414:254-260
Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional