Phosphide in gallium bismuth: structural, electronic, elastic, and optical properties of GaPxBi1−x alloys.

Autor: Touam, S., Mounis, N., Boumaza, A., Ghemid, S., Meradji, H., Khenata, R., Omran, S. Bin, Badi, N., Kushwaha, A. K.

Publikováno v: Journal of Molecular Modeling; Jul2022, Vol. 28 Issue 7, p1-16, 16p

Correction to: Phosphide in gallium bismuth: structural, electronic, elastic, and optical properties of GaP x Bi 1-x alloys.

Autor: Touam S; Laboratoire LPR, Departement de Physique, Faculte Des Sciences, Universite Badji Mokhtar, Annaba, Algeria.; Departement de Physique, Faculte Des Sciences Et de La TechnologieUniversite Chadli Bendjedid, El Tarf, Algeria., Mounis N; Departement de Physique, Faculte Des Sciences Exactes, Universite Djilali Liabes Sidi Bel Abbes, Sidi Bel Abbes, Algeria., Boumaza A; Laboratoire LPR, Departement de Physique, Faculte Des Sciences, Universite Badji Mokhtar, Annaba, Algeria., Ghemid S; Laboratoire LPR, Departement de Physique, Faculte Des Sciences, Universite Badji Mokhtar, Annaba, Algeria., Meradji H; Laboratoire LPR, Departement de Physique, Faculte Des Sciences, Universite Badji Mokhtar, Annaba, Algeria. hmeradji@yahoo.fr., Khenata R; Laboratoire de Physique Quantique de La Matiere Et de La Modelisation Mathematique (LPQ3M), Universite de Mascara, 29000, Sidi Bel Abbes, Algeria. rabah_khenata@univ-mascara.dz., Bin Omran S; Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh, 11451, Saudi Arabia., Badi N; Department of Physics, Faculty of Science, University of Tabuk, Tabuk, 71491, Saudi Arabia., Kushwaha AK; Department of Physics, K.N. Govt. P.G. College Gyanpur, Bhadohi, 221304, India.

Publikováno v: Journal of molecular modeling [J Mol Model] 2022 Jun 23; Vol. 28 (7), pp. 200. Date of Electronic Publication: 2022 Jun 23.