Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mounira BOUARROUDJ-BERKANI"'
Publikováno v:
Conversion de l'énergie électrique.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9187e9f525b3bac7e9642ac6a28e615f
https://doi.org/10.51257/a-v1-d3126
https://doi.org/10.51257/a-v1-d3126
Autor:
Stéphane Lefebvre, Gilles Rostaing, Ghania Belkacem, Pierre-Yves Joubert, Mounira Bouarroudj-Berkani, Denis Labrousse
Publikováno v:
European Physical Journal: Applied Physics
European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), ⟨10.1051/epjap/2014130486⟩
European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), ⟨10.1051/epjap/2014130486⟩
The development of power electronics in the field of transportations (automotive, aeronautics) requires the use of power semiconductor devices providing protection and diagnostic functions. In the case of series protections power semiconductor device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d3107aa809a7ddd1a27b48624415d4f
https://doi.org/10.1051/epjap/2014130486
https://doi.org/10.1051/epjap/2014130486
Autor:
Ruffilli, Roberta
Publikováno v:
Condensed Matter [cond-mat]. Université Paul Sabatier (Toulouse 3); École doctorale Sciences de la Matière, 2017. English
Material chemistry. Université Paul Sabatier-Toulouse III, 2017. English. ⟨NNT : 2017TOU30256⟩
Material chemistry. Université Paul Sabatier-Toulouse III, 2017. English. ⟨NNT : 2017TOU30256⟩
This thesis, a collaboration between CEMES-CNRS, Satie laboratory (ENS Cachan) and NXP Semiconductors is motivated by the comprehension of the failure mechanisms of low voltage power MOSFET devices produced for ap- plications in the automotive indust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1838405a897e5c6cf21f45cdf28c4e55
https://hal.archives-ouvertes.fr/tel-01666437
https://hal.archives-ouvertes.fr/tel-01666437
