Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mounika Kotha"'
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 12, Pp n/a-n/a (2021)
Anisotropic layered GaTe has emerged as a potential material for polarization‐sensitive applications. The optical anisotropy in monoclinic GaTe is triggered by its in‐plane structural anisotropy, as each layer comprises periodic chain‐like stru
Externí odkaz:
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
Publikováno v:
Nanomaterials, Vol 9, Iss 11, p 1510 (2019)
Emerging two-dimensional gallium chalcogenides, such as gallium telluride (GaTe), are considered promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, opto
Externí odkaz:
https://doaj.org/article/4974c552f40f4ed8af701bbf77834c38
Autor:
Natasha Tabassum, Mounika Kotha, Vidya Kaushik, Brian Ford, Sonal Dey, Edward Crawford, Vasileios Nikas, Spyros Gallis
Publikováno v:
Nanomaterials, Vol 8, Iss 11, p 906 (2018)
The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual N
Externí odkaz:
https://doaj.org/article/439b39099bcb454eae2978a8ee34116f
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 12, Pp n/a-n/a (2021)
Anisotropic layered GaTe has emerged as a potential material for polarization‐sensitive applications. The optical anisotropy in monoclinic GaTe is triggered by its in‐plane structural anisotropy, as each layer comprises periodic chain‐like stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9446f374d382d8ceba9392bb68cb8cc0
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
Publikováno v:
Nanomaterials, Vol 9, Iss 11, p 1510 (2019)
Nanomaterials
Volume 9
Issue 11
Nanomaterials
Volume 9
Issue 11
Emerging two-dimensional gallium chalcogenides, such as gallium telluride (GaTe), are considered promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2998d6e2bbbedc2840f82210746003b
https://www.mdpi.com/2079-4991/9/11/1510
https://www.mdpi.com/2079-4991/9/11/1510