Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Mott Criterion"'
Autor:
G A Thomas
Publikováno v:
High Temperature Superconductivity ISBN: 9781003209621
The motivation for the optical studies of materials containing Cu-0 planes has been to try to understand high temperature superconductivity. This chapter presents measurements of the electrical conductivity σ as a function of four 'variables': the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cafa856086eda0f97ad7f55b99ef677a
https://doi.org/10.1201/9781003209621-6
https://doi.org/10.1201/9781003209621-6
Publikováno v:
Physical Review Materials. 5
We start by analyzing experimental data of Spinelli et al. [Phys. Rev. B 81, 155110 (2010)] for the conductivity of $n$-type bulk crystals of ${\mathrm{SrTiO}}_{3}$ (STO) with broad electron concentration $n$ range of $4\ifmmode\times\else\texttimes\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dec18f0cb91c11cceff2634efabc296
https://doi.org/10.1103/physrevmaterials.5.044606
https://doi.org/10.1103/physrevmaterials.5.044606
Akademický článek
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Recent experiments on the twisted transition metal dichalcogenide (TMD) material, $\rm WSe_2/WS_2$, have observed insulating states at fractional occupancy of the moir\'e bands. Such states were conceived as generalized Wigner crystals (GWCs). In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3458a5d6604fd2c2ef88229ce8678e36
http://arxiv.org/abs/2009.13536
http://arxiv.org/abs/2009.13536
Autor:
Friedrich Hensel, Daniel Slocombe, Peter P. Edwards, Vladimir L. Kuznetsov, Benzhen Yao, C. N. R. Rao, Tiancun Xiao
Publikováno v:
Philos Trans A Math Phys Eng Sci
The demarcation of the chemical elements into metals and non-metals dates back to the dawn of Dmitri Mendeleev's construction of the periodic table; it still represents the cornerstone of our view of modern chemistry. In this contribution, a particul
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6db6e23be7dc484b121a59099d37b67c
https://doi.org/10.1098/rsta.2020.0213
https://doi.org/10.1098/rsta.2020.0213
Publikováno v:
Bulletin of Materials Science. 43
Structure and electrical resistivity of $$(1 - x)\hbox {La}_{2}\hbox {NiO}_{4+\delta }/x\hbox {BaTiO}_{3}$$ composites ( $$x = 0.05, 0.1, 0.2, 0.3, 0.5$$ ) produced by combining the sol–gel and ceramic sintering methods have been investigated. Amon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae68b52f107b6bd5038b18247bef0ed5
https://doi.org/10.1007/s12034-020-02125-3
https://doi.org/10.1007/s12034-020-02125-3
Autor:
G. Vignesh, P. Nithiananthi
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
A theoretical investigation has been made on Semiconductor to Metal transition (SMT) due to direct excitons (DXs) i.e Exciton Mott Transition (EMT) by observing exciton diamagnetic susceptibility in GaAs/Al0.3Ga0.7As Square Quantum Wells (SQWs). Vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d928ca6ada1c6a9ad1afbadcb419e907
https://doi.org/10.1063/5.0017182
https://doi.org/10.1063/5.0017182
Publikováno v:
Journal of Electronic Materials. 48:679-683
Transport properties of Indium Arsenide (InAs) films deposited at different working pressures are investigated in the temperature interval of T ∼ 2–250 K. Electrical transport of InAs films is related to the degree of disorder, which increases as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6579e2b4b2df227f6aae15a78cb780d
https://doi.org/10.1007/s11664-018-6783-7
https://doi.org/10.1007/s11664-018-6783-7
Publikováno v:
Applied Physics Letters. 117:152107
β-Ga2O3 crystals doped with the donor impurities Si or Sn are investigated by Raman spectroscopy. In addition to the well-known intrinsic Raman allowed phonon modes, we discover several spectral features when the doping concentration exceeds the Mot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::429b247c02f0686ad9d0dc989fcc1b1c
https://doi.org/10.1063/5.0024494
https://doi.org/10.1063/5.0024494
Autor:
Simon P. Ringer, S.L. Gu, Y.D. Zheng, Shunming Zhu, Jiandong Ye, Bin Liu, Jingning Li, Xiangyuan Cui, Rui Zhang, Tongchuan Ma, Xianhui Chen, Y. Kuang, Fang-Fang Ren
Publikováno v:
Applied Physics Letters. 117:102104
In this Letter, we report on the evolution of electronic properties governed by epitaxial misfit strain in cubic In2O3 epilayers grown on sapphire. At elevated growth temperature, the competition between the film/substrate lattice mismatch and the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e4792ef8f69d9f9a162374565e629e
https://doi.org/10.1063/5.0021344
https://doi.org/10.1063/5.0021344