Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Motonobu Takeya"'
Autor:
Yoshio Ohfuji, Tsuyoshi Fujimoto, Shu Goto, Masao Ikeda, T. Hashizu, Shinro Ikeda, Motonobu Takeya, Takashi Mizuno
Publikováno v:
physica status solidi (c). 1:1461-1467
GaN-based blue-violet lasers with a kink-free output power of higher than 150 mW have been successfully realized by adopting a new ridge structure and appropriately designing the beam divergence. The new ridge structure is a narrow 1.4 μm ridge cove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01570e2e3c60063bc65b2d262f4e414
https://doi.org/10.1002/pssc.200304086
https://doi.org/10.1002/pssc.200304086
Autor:
Tomomi Sasaki, Kenji Oikawa, Takashi Mizuno, Motonobu Takeya, Yoshio Ohfuji, Shiro Uchida, Tsuyoshi Fujimoto, Masao Ikeda, Yoshifumi Yabuki, Shinro Ikeda
Publikováno v:
physica status solidi (c). :2292-2295
Degradation experiments for AlGaInN-based laser diodes were conducted for the purpose of constructing a possible model of the degradation mechanism. Lasers in this experiment were aged under 30 mW continuous-wave operation at 60 °C, and the lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6d299b985b55186fac2107539ce4ff
https://doi.org/10.1002/pssc.200303324
https://doi.org/10.1002/pssc.200303324
Publikováno v:
physica status solidi (a). 200:139-142
We investigate degraded GaN-based laser diodes (LDs) fabricated on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy. The dislocation density in the wing region of the ELO is of the order of 106/cm2 and there are app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d399245db45f8582ee998dcc44c1c9c
https://doi.org/10.1002/pssa.200303322
https://doi.org/10.1002/pssa.200303322
Autor:
Motonobu Takeya, Tomonori Hino, Takeharu Asano, Takashi Mizuno, Tsuyoshi Tojyo, Yoshifumi Yabuki, Shiro Uchida, Satoru Kijima, Masao Ikeda, Shu Goto
Publikováno v:
Japanese Journal of Applied Physics. 41:1829-1833
High-power AlGaInN laser diodes (LDs) with both high kink level and low relative intensity noise (RIN) are successfully fabricated. A kink level of higher than 100 mW is obtained by using a new ridge structure and by narrowing the ridge width down to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712caa5b9a9c52056a4ba00f68626f63
https://doi.org/10.1143/jjap.41.1829
https://doi.org/10.1143/jjap.41.1829
Autor:
Takao Miyajima, Kenji Funato, Takeharu Asano, Shiro Uchida, Toshimasa Kobayashi, Satoru Kijima, Katsunori Yanashima, Tomonori Hino, Motonobu Takeya, Tsuyoshi Tojyo, Masao Ikeda, Tsunenori Asatsuma, Shigetaka Tomiya
Publikováno v:
Journal of Physics: Condensed Matter. 13:7099-7114
We report our recent progress on GaN-based high-power laser diodes (LDs), which will be applied as a light source in high-density optical storage systems. We have developed raised-pressure metal-organic chemical vapour deposition (RP-MOCVD), which ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb1ab26d7bb389dbab79abb7692d5a5
https://doi.org/10.1088/0953-8984/13/32/315
https://doi.org/10.1088/0953-8984/13/32/315
Autor:
Masao Ikeda, Takeharu Asano, Tsuyoshi Tojyo, Etsuo Morita, Katsunori Yanashima, Shiro Uchida, Tsuneyoshi Aoki, Satoru Kijima, Masafumi Ozawa, Shinichi Ansai, Toshimasa Kobayashi, Tsunenori Asatsuma, Tomonori Hino, Yoshifumi Yabuki, Katsuyoshi Shibuya, Shinro Ikeda, Motonobu Takeya
Publikováno v:
Journal of Crystal Growth. 221:646-651
Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure metal-organic chemical vapor deposition (MOCVD). In order to determine the effect of ELO-G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b6737bd6840b55d14710ec48b44384
https://doi.org/10.1016/s0022-0248(00)00793-4
https://doi.org/10.1016/s0022-0248(00)00793-4
Autor:
David Samuels, Ryo Kasegawa, Tomiji Tanaka, Motonobu Takeya, Kageyasu Sako, Kazuo Takahashi, Kenjiro Watanabe, Mitsuru Toishi
Publikováno v:
Applied optics. 46(17)
An external-cavity laser with a wavelength of 405 nm and an output of 80 mW has been developed for holographic data storage. The laser has three states: the first is a perfect single mode, whose coherent length is 14 m; the second is a three-mode sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a93472c98e8faeb57425ef9b60b3399
https://pubmed.ncbi.nlm.nih.gov/17514319
https://pubmed.ncbi.nlm.nih.gov/17514319
Publikováno v:
MRS Proceedings. 831
Structural defects affecting the lifetime of GaN-based laser diodes (LDs) on epitaxial lateral overgrown (ELO) GaN layers have been investigated. Almost all of the threading dislocations that appeared in the wing regions have edge character, whereas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::256b992071782f0b81aa761c94a9b945
https://doi.org/10.1557/proc-831-e1.1
https://doi.org/10.1557/proc-831-e1.1
Autor:
Shinichi Ansai, Satoru Kijima, Motonobu Takeya, Shinro Ikeda, Tsuyoshi Tojyo, Shu Goto, Masao Ikeda, Takeharu Asano, Takashi Mizuno, Shiro Uchida, Tomonori Hino
Publikováno v:
MRS Proceedings. 693
High-power AlGaInN-based laser diodes (LDs) operating with high reliability in the 400-nm band have been successfully fabricated using a high-productivity process. Epitaxial lateral overgrowth (ELO) over a 10-m m region was employed to obtain a broad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8fc3ec64bf18d70d28e72b7147bc04
https://doi.org/10.1557/proc-693-i4.1.1
https://doi.org/10.1557/proc-693-i4.1.1
Autor:
Masao Ikeda, Motonobu Takeya
Publikováno v:
Japanese Journal of Applied Physics. 40:6260
We have developed two methods for the p-type activation of Mg-doped GaN; a low-temperature long-time annealing method and a RF input activation method. In the low-temperature long-time annealing method, hole concentration increased in proportion to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711300b7362180467d6cc04f7452ec8d
https://doi.org/10.1143/jjap.40.6260
https://doi.org/10.1143/jjap.40.6260