Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Motoki Takauji"'
Autor:
Junya Maeda, Hiroki Aoshima, Takehito Nagakura, Kousuke Torii, Harumasa Yoshida, Motoki Takauji, Takenori Morita, Hideyuki Naito
Publikováno v:
IEEE Photonics Technology Letters. 27:1660-1662
We report on the long-term reliable continuous wave (CW) operation of high-power and high-efficiency 915-nm broad-area laser diodes (BA-LDs). An output power of over 20 W and a maximum power-conversion efficiency of over 65% have been marked at a hea
Autor:
Motoki Takauji, Nobuto Kageyama, Junya Maeda, Harumasa Yoshida, Hirofumi Miyajima, Takehito Nagakura, Takenori Morita, Kousuke Torii
Publikováno v:
IEEE Journal of Quantum Electronics. 48:991-994
We report on our recent development of high power 940 nm laser diodes (LDs) bars. The optimization of the laser structure and thermal management allow over 200-W continuous wave (CW) operation with 58% conversion efficiency from the 1-cm LD bar. We h
Autor:
Masahiro Miyamoto, Harumasa Yoshida, Takehito Nagakura, Junya Maeda, Motoki Takauji, Takenori Morita, Kousuke Torii
Publikováno v:
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC.
Summary form only given. High power broad-area laser diodes at 9xx-nm have been widely employed in many industrial applications including direct material processing and pumping fiber lasers and solid state lasers [1,2]. 915-nm broad-area laser diodes
Autor:
Junya Maeda, Takehito Nagakura, Nobuto Kageyama, Motoki Takauji, Harumasa Yoshida, Kousuke Torii, Takenori Morita, Takayuki Uchiyama
Publikováno v:
IEEE Photonics Technology Letters. :1-1
We report on our recent development of quasi-continuous-wave 940-nm laser diode (LD) bars with passive cooled type. The 10 LD bar stacks with a narrow pitch of 1.54 mm have demonstrated a high output power of 10.1 kW, corresponding to 1 kW/bar, under
Autor:
Harumasa Yoshida, Kousuke Torii, Motoki Takauji, Takenori Morita, Junya Maeda, Hirofumi Miyajima, Masahiro Miyamoto, Takehito Nagakura
Publikováno v:
ISLC 2012 International Semiconductor Laser Conference.
High power broad-area laser diodes in a 9xx-nm spectral range have been widely employed in industrial applications including direct material processing, and pumping fiber lasers and solid state lasers [1]. Those applications require high output power
Autor:
Kousuke Torii, Takenori Morita, Junya Maeda, Harumasa Yoshida, Masahiro Miyamoto, Motoki Takauji, Nobuto Kageyama, Hirofumi Miyajima, Takehito Nagakura
Publikováno v:
2012 IEEE Photonics Society Summer Topical Meeting Series.
We have developed the 915 nm single emitter LDs with a window structure. A high output power of 20.2 W and a power conversion efficiency of 66% at 10°C have been obtained without COMD. We have also developed the 940 nm LD bars using the thermal expa
Autor:
Junya Maeda, Nobuto Kageyama, Hirofumi Miyajima, Harumasa Yoshida, Motoki Takauji, Takenori Morita, Takehito Nagakura, Kousuke Torii
Publikováno v:
SPIE Proceedings.
High Power Laser Diode (LD) modules are widely used as high-brightness light sources for pumping solid-state lasers and for direct diode laser processing utilizing a compact feature. The LD bars installed in modules are required with higher output po
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Autor:
Takenori Morita, Hirofumi Miyajima, Masahiro Miyamoto, Junya Maeda, Harumasa Yoshida, Takehito Nagakura, Kousuke Torii, Motoki Takauji
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 19:1502104-1502104
We report on high-power 915-nm broad-area laser diodes with a window structure formed by a impurity-free vacancy disordering method. A maximum conversion efficiency of 68% and high output power of 19.8 W have been achieved at 20°C. A stable operatio
Publikováno v:
Japanese Journal of Applied Physics. 44:2483
We have fabricated p-Si/β-FeSi2 film/n-Si double-heterstructure (DH) light-emitting diodes (LEDs) on Si(111) substrates by molecular beam epitaxy (MBE). It was found that both the thickness of an undoped Si overlayer and subsequent annealing tempera