Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Motohiro Kohno"'
Autor:
Shigeru Takatsuji, Makoto Sekine, Akira Horikoshi, Shohei Nakamura, Masaru Hori, Soichi Nadahara, Motohiro Kohno, Kazuo Kinose, Kenji Ishikawa, Atsushi Tanide
Publikováno v:
Journal of Vacuum Science & Technology B. 37:021209
Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl2–BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl2, straight sidewall shapes were achieved through BCl3 gas additio
Autor:
Soichi Nadahara, Masazumi Nishikawa, Shigeru Takatsuji, Akira Horikoshi, Motohiro Kohno, Akinori Ebe, Kazuo Kinose, Masaru Hori, Shohei Nakamura, Atsushi Tanide, Kenji Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 58:SAAF04
Publikováno v:
Japanese Journal of Applied Physics. 41:2266-2275
In this study, we discuss the evaluation of sodium ions in silicon oxides (SiO2) by noncontact capacitance–voltage measurement and ultraviolet (UV) irradiation. The oxide charge (Nox) of sodium-contaminated wafer decreases with UV irradiation. The
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
In this study, we discuss a new method to evaluate surface contamination on oxidized silicon using noncontact capacitance-voltage measurement under UV irradiation. The UV light of wavelengths ranging from 240 nm to 290 nm generates a negative charge
Publikováno v:
Japanese Journal of Applied Physics. 42:7601-7602
We investigated the charge generation effect on a silicon oxide surface treated with hydrofluoric acid by noncontact capacitance measurement. A negative charge is induced by storing wafers in a plastic box and it increases over time, while N2-purged
Publikováno v:
Japanese Journal of Applied Physics. 37:5800
In this study, we evaluate the doping concentrations of bare silicon wafers by noncontact capacitance–voltage (C–V) measurements. The metal-air-insulator-semiconductor (MAIS) method enables the measurement of C–V characteristics of silicon wafe
Publikováno v:
Japanese Journal of Applied Physics. 36:935
In order to develop a new field of application and to improve the measurement accuracy, a new sensor for the noncontact capacitance/voltage system [metal-air-insulator-semiconducter method (MAIS method)] was successfully developed. The new sensor ful
Autor:
Ikuyoshi Nakatani, Hiroshi Okada, Sakai Takamasa, Hideaki Matsubara, Motohiro Kohno, Sadao Hirae, Tatsufumi Kusuda, Yasuhiro Imaoka
Publikováno v:
Japanese Journal of Applied Physics. 35:5539
In this paper, we discuss the measurement of minority carrier generation lifetime by the noncontact metal-insulator-semiconductor (MIS) method. This method enables electrical measurements on metal-air-insulator-semiconductor (MAIS) structure utilizin
Autor:
Motohiro Kohno, Sadao Hirae, Tatsufumi Kusuda, Hideaki Matsubara, Ikuyoshi Nakatani, Sakai Takamasa
Publikováno v:
Japanese Journal of Applied Physics. 35:3311
A new noncontact capacitance/voltage ( C–V ) measurement technique which enables the application of semiconductor materials without insulator film on the surface is introduced. The applicability of this technique has been verified by measuring oxid
Autor:
Sakai Takamasa, Motohiro Kohno, Tatsufumi Kusuda, Hideaki Matsubara, Sadao Hirae, Hiroshi Okada, Ikuyoshi Nakatani
Publikováno v:
Japanese Journal of Applied Physics. 33:1823
This paper describes a novel approach to the quantitative characterization of semiconductor surface charging caused by plasma exposures and ion implantations. The problems in conventional evaluation of charging are also discussed. Following the discu