Zobrazeno 1 - 10
of 155
pro vyhledávání: '"Motohiro Iwami"'
Publikováno v:
Surface Science. 602:2089-2095
We analyzed both the elemental depth profile and chemical bonds of Au/p-Si(1 1 1)-7 × 7 grown at room temperature by medium energy ion scattering combined with photoelectron spectroscopy using synchrotron-radiation-light. It is found unambiguously t
Publikováno v:
Journal of Materials Research. 22:1275-1280
We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in w
Publikováno v:
Surface Science. 589:106-113
Using scanning tunneling microscopy (STM), the early stages of the Mn/Si(1 1 1) interface formation upon annealing of 0.05–0.30 ML of Mn at 320–550 °C have been studied. It has been found that depending on the growth conditions several kinds of
Autor:
Chihiro Kamezawa, Z. An, T. Shinagawa, T. Fujisawa, S. Azatyan, Masaaki Hirai, Motohiro Iwami, Masahiko Kusaka
Publikováno v:
Applied Surface Science. 249:362-366
We have studied interface electronic structure of transition metal film (Fe, Zr)/4H–SiC (substrate) contact systems by using a photoemission electron microscopy (PEEM) and a soft X-ray fluorescence spectroscopy (SXFS). PEEM can show surface micro-
Autor:
Ken-ichi Kobayashi, Motohiro Iwami, Tomihiro Kamiya, Akihiko Ohi, Akimasa Kinoshita, Takeshi Ohshima, Yasutaka Fukushima, Reisaburo Tanaka, Itsuo Nakano
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541:213-220
We studied radiation tolerance of pn junction 6H-SiC (silicon carbide) diodes on electrical properties and detector performance for alpha particles. Three pn-SiC diodes were irradiated with gamma-rays at doses ( 60 Co source) up to 2.5 MGy and two di
Autor:
Yasutaka Fukushima, Akimasa Kinoshita, Masakazu Oikawa, Toshio Hirao, Jamie S. Laird, Takeshi Ohshima, T. Satoh, Motohiro Iwami, Takeshi Wakasa, Tomihiro Kamiya, Shinobu Onoda, Takeshi Yamakawa, Reisaburo Tanaka, Itsuo Nakano, Hisayoshi Itoh
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541:236-240
Using the single ion hit Transient Ion Beam Induced Current (TIBIC), the transient current generated in n + p 6H–SiC diodes by 15 MeV-oxygen (O 4+ ) microbeams was measured. The signal peak of the transient current increases, and the fall-time, whi
Publikováno v:
Applied Surface Science. 237:607-611
Photoemission electron microscopy (PEEM) has been applied to systems such as Fe, Cu, Ti and Zr on SiC substrates. The products on the surface that result from SiC decomposition and reaction with the deposited metal films can be well imaged by PEEM us
Autor:
Chihiro Kamezawa, Joselito P. Labis, Hirofumi Namatame, Masaki Taniguchi, Motohiro Iwami, Masaaki Hirai, Masahiko Kusaka
Publikováno v:
Thin Solid Films. :107-111
Soft X-ray emission spectroscopy (SXES) and photoemission electron microscopy (PEEM) were performed to study the solid phase reaction in the Ti(film)/Si(substrate) system with Mo interlayer. SXES is a suitable technique for non-destructive buried-lay
Publikováno v:
Applied Surface Science. 237:105-109
Studying of consecutive room temperature (RT) Mn deposition onto Si(111) surface was carried out by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM) methods. We investigated that the growth of manganese atoms on the Si(111) s
Autor:
Hirofumi Namatame, Masaki Taniguchi, Joselito P. Labis, Masahiko Kusaka, Motohiro Iwami, J. Oh, Masaaki Hirai
Publikováno v:
Applied Surface Science. 237:170-175
The √3 x √3R30° reconstructed surface of 6H-SiC(0001) was exposed to N 2 O from 10 L to ∼10 6 L at sample temperatures ranging from 500 to 800 °C. The Si 2p emission spectra showed fast oxide formation for the first 10 L of N 2 O exposure and