Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Motofumi Saitoh"'
Autor:
Craig A. J. Fisher, Xiang Gao, Yumi H. Ikuhara, Yuichi Ikuhara, Akihide Kuwabara, Motofumi Saitoh, Shunsuke Kobayashi, Takafumi Ogawa
Publikováno v:
Physical chemistry chemical physics : PCCP. 20(38)
Electrical conductivity, state of charge and chemical stability of Li-ion battery materials all depend on the electronic states of their component atoms, and tools for measuring these reliably are needed for advanced materials analysis and design. He
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::660330e4bffe265e5ddbf1d6e249c583
https://pubmed.ncbi.nlm.nih.gov/30247492
https://pubmed.ncbi.nlm.nih.gov/30247492
Autor:
Akihide Kuwabara, Yoshihiro Sugawara, Kazuhiko Matsumoto, Motofumi Saitoh, Yuichi Ikuhara, Rika Hagiwara, Yoshio Ukyo, Kaname Yoshida
Publikováno v:
Microscopy. 67:i27-i27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10fb35be496e38422b56a2cfdfe10bc1
https://doi.org/10.1093/jmicro/dfy079
https://doi.org/10.1093/jmicro/dfy079
Autor:
Seiichi Shishiguchi, Akira Mineji, Motofumi Saitoh, Makiko Oshida, Makoto Miyamura, Nobuyuki Ikarashi
Publikováno v:
Japanese Journal of Applied Physics. 47:2365-2368
We demonstrate that electron holography can be used to map the electrostatic potential in source–drain extensions (SDEs) of 30-nm-gate-length metal–oxide–semiconductor field-effect transistors (MOSFETs). To reduce specimen-preparation artifacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2bb697bbe62a07c0d0b52c76280a57
https://doi.org/10.1143/jjap.47.2365
https://doi.org/10.1143/jjap.47.2365
Autor:
Markus Wilde, Katsuyuki Fukutani, Akio Toda, Yuden Teraoka, Masayuki Terai, Motofumi Saitoh, Ziyuan Liu, Akitaka Yoshigoe, Shinji Fujieda, Yoshinao Miura
Publikováno v:
ECS Transactions. 6:185-202
We performed a physical and electrical characterization of the defects that would cause negative and positive bias temperature instability (NBTI, PBTI) in gate stacks that use SiO2, plasma-nitrided SiO2, HfSiON, and HfSiON with Ni- silicide electrode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff20381946da706e7ea307a30b9435b2
https://doi.org/10.1149/1.2728797
https://doi.org/10.1149/1.2728797
Publikováno v:
ECS Transactions. 3:143-152
Electron energy-loss spectroscopy in a scanning transmission electron microscope (STEM-EELS) and ab initio electronic structure calculations were used to analyze how the chemical composition of a HfxSi1-xO2 film affects the electronic structure near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f608e0f8ba06ed34467b768d3a422fe0
https://doi.org/10.1149/1.2355706
https://doi.org/10.1149/1.2355706
Publikováno v:
Microelectronics Reliability. 45:57-64
Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/Si〈1 0 0〉 system were characterized by using conductance–frequency measurements, electron-spin resonance measurements, and synchrotro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03ec6a633eb3225a2d8c0cbff9bc450
https://doi.org/10.1016/j.microrel.2004.02.017
https://doi.org/10.1016/j.microrel.2004.02.017
Publikováno v:
Applied Physics Letters. 85:449-451
We fabricated high-quality Hf–silicate (HfSixOy) gate dielectrics by utilizing the solid phase interface reaction between physical-vapor-deposited metal–Hf (typically 0.5nm thick) and SiO2 underlayers. Metal diffusion to the SiO2 layer increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1243d9d6aff03e7a7d12903cb36afd25
https://doi.org/10.1063/1.1767593
https://doi.org/10.1063/1.1767593
Publikováno v:
Applied Physics Letters. 82:3677-3679
Interface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe93161dda967a5e6702251c8b790e82
https://doi.org/10.1063/1.1578535
https://doi.org/10.1063/1.1578535
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 21(10)
Oxygen K-electron energy loss near edge structures (ELNES) of monoclinic, tetragonal, and cubic HfO(2) were calculated by the first-principles full-potential augmented plane wave plus local orbitals (APW+lo) method. By considering the relativistic ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17f7bd571c4a3227e0c873ed3a3f82d7
https://pubmed.ncbi.nlm.nih.gov/21817432
https://pubmed.ncbi.nlm.nih.gov/21817432
Autor:
Hiroshi Sunamura, Takashi Ogura, Kenzo Manabe, Takashi Nakagawa, Motofumi Saitoh, Toru Tatsumi, K. Masuzaki, Hirohito Watanabe
Publikováno v:
2008 Symposium on VLSI Technology.
We demonstrate midgap and band-edge effective workfunctions (EWFs) control with simple metal gate process scheme (single metal gate/single gate dielectric), using impurity-segregated NiSi2/SiON structure for embedded memory application. The applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1100daa5ee4b88e2fdda5598b7c9f47a
https://doi.org/10.1109/vlsit.2008.4588558
https://doi.org/10.1109/vlsit.2008.4588558